SCHEMBL677315

SCHEMBL677315

[CH2]Cc1c(C(C)(C)CC)cccc1C(C)(C)CC

nearest known ligand 0.34

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.33
MAPK1 P28482 2/20 0.31
SMN1; SMN2 Q16637 2/20 0.31
NPC1 O15118 1/20 0.31
LMNA P02545 1/20 0.31
CASP3 P42574 1/20 0.31
RAB9A P51151 1/20 0.31
ATM Q13315 1/20 0.31
SENP8 Q96LD8 1/20 0.31
SENP7 Q9BQF6 1/20 0.31
SENP6 Q9GZR1 1/20 0.31
MEN1 O00255 1/20 0.31
MITF O75030 1/20 0.31
MAPT P10636 1/20 0.31
HTT P42858 1/20 0.31
UBE2N P61088 1/20 0.31
KMT2A Q03164 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL677479 0.79 CA2 (0.48) CA2ATMNPSR1
SCHEMBL6386087 0.77 CA2 (0.39) CA2MAPK1SMN1; SMN2NPC1LMNA
SCHEMBL677124 0.76 GABRA1 (0.33)
SCHEMBL779788 0.76 MAPK1 (0.41) CA2MAPK1SMN1; SMN2NPC1LMNA
SCHEMBL780023 0.75 CA2 (0.37) CA2MAPK1SMN1; SMN2NPC1LMNA
SCHEMBL29233351 0.75 CA2 (0.37) CA2MAPK1SMN1; SMN2NPC1LMNA
SCHEMBL29260335 0.75 NPC1 (0.37) CA2MAPK1SMN1; SMN2NPC1LMNA
SCHEMBL56491 0.73 CA2 (0.58) CA2SMN1; SMN2NPC1LMNARAB9A
SCHEMBL817134 0.71 TAAR1 (0.37) CA2MAPK1SMN1; SMN2NPC1LMNA
SCHEMBL5252147 0.70 TAAR1 (0.43) CA2SMN1; SMN2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed
US-6207343-B1 RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION FUJI PHOTO FILM CO., LTD. (JP) 2001-03-27 US disclosed