Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRA1 | P14867 | 2/20 | 0.58 |
| ▸ | GABRB2 | P47870 | 2/20 | 0.58 |
| ▸ | PTGS2 | P35354 | 4/20 | 0.35 |
| ▸ | PTGS1 | P23219 | 3/20 | 0.35 |
| ▸ | LMNA | P02545 | 3/20 | 0.35 |
| ▸ | CYP2C9 | P11712 | 3/20 | 0.35 |
| ▸ | ESR1 | P03372 | 3/20 | 0.35 |
| ▸ | AKR1C3 | P42330 | 2/20 | 0.35 |
| ▸ | CXCR1 | P25024 | 2/20 | 0.35 |
| ▸ | CXCR2 | P25025 | 2/20 | 0.35 |
| ▸ | ALOX5 | P09917 | 2/20 | 0.35 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.35 |
| ▸ | HTR2A | P28223 | 2/20 | 0.35 |
| ▸ | BLM | P54132 | 2/20 | 0.35 |
| ▸ | PMP22 | Q01453 | 2/20 | 0.35 |
| ▸ | ALB | P02768 | 1/20 | 0.35 |
| ▸ | RARB | P10826 | 1/20 | 0.35 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.35 |
| ▸ | NR1I3 | Q14994 | 1/20 | 0.35 |
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL677521 | 0.86 | GABRA1 (0.50) | GABRA1GABRB2PTGS2PTGS1LMNA | |
| SCHEMBL5053439 | 0.83 | GABRA1 (0.62) | GABRA1GABRB2PTGS2PTGS1LMNA | |
| SCHEMBL11808620 | 0.76 | GABRA1 (0.58) | GABRA1GABRB2PTGS2PTGS1LMNA | |
| Phenol SCHEMBL28301641 | 0.74 | GABRA1 (0.61) | GABRA1GABRB2PTGS2PTGS1LMNA | |
| SCHEMBL2921822 | 0.74 | GABRA1 (0.52) | GABRA1GABRB2LMNACYP2D6SLC6A2 | |
| SCHEMBL11809009 | 0.73 | GABRA1 (0.55) | GABRA1GABRB2PTGS2PTGS1LMNA | |
| SCHEMBL7637108 | 0.73 | GABRA1 (0.60) | GABRA1GABRB2LMNAAKR1C2ALOX15 | |
| SCHEMBL318750 | 0.73 | GABRA1 (1.00) | GABRA1GABRB2PTGS2LMNACYP2C9 | |
| SCHEMBL2292664 | 0.73 | GABRA1 (0.71) | GABRA1GABRB2PTGS2PTGS1LMNA | |
| SCHEMBL14551466 | 0.73 | GABRA1 (0.60) | GABRA1GABRB2PTGS2PTGS1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| EP-1367439-B1 | Radiation-sensitive composition | FUJIFILM CORP (JP) | 2012-08-01 | — | — | EP | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| EP-2399168-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM Corporation (JP) | 2011-12-28 | — | — | EP | disclosed |
| WO-2010150917-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-29 | — | — | WO | disclosed |
| EP-1467251-B1 | Positive resist composition | FUJIFILM CORP (JP) | 2010-09-08 | — | — | EP | disclosed |
| EP-1465010-B1 | Positive resist composition | FUJIFILM CORP (JP) | 2009-10-21 | — | — | EP | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7250246-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-07-31 | — | — | US | disclosed |
| EP-1465010-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2004-10-06 | — | — | EP | disclosed |
| US-6743565-B2 | POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR | FUJI PHOTO FILM CO., LTD. (JP) | 2004-06-01 | — | — | US | disclosed |
| US-6727033-B2 | A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN | FUJI PHOTO FILM CO., LTD. (JP) | 2004-04-27 | — | — | US | disclosed |
| US-6692883-B2 | GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER | FUJI PHOTO FILM CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| EP-1367439-A1 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2003-12-03 | — | — | EP | disclosed |
| US-6630280-B1 | Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness | FUJI PHOTO FILM CO., LTD. (JP) | 2003-10-07 | — | — | US | disclosed |
| US-20030134221-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-07-17 | — | — | US | disclosed |
| US-20030108811-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-06-12 | — | — | US | disclosed |
| US-20020012866-A1 | Positive photoresist composition | FUJIFILM CORPORATION (JP) | 2002-01-31 | — | — | US | disclosed |
| US-6207343-B1 | RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION | FUJI PHOTO FILM CO., LTD. (JP) | 2001-03-27 | — | — | US | disclosed |