SCHEMBL677904

SCHEMBL677904

CC(C1CC2CCC1C2)C1CC2CCC1C2

nearest known ligand 0.46

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
HPGD P15428 2/20 0.46
LMNA P02545 1/20 0.46
SMN1; SMN2 Q16637 1/20 0.46
POLB P06746 1/20 0.39
KMT2A Q03164 4/20 0.37
ALDH1A1 P00352 4/20 0.37
NPC1 O15118 1/20 0.36
MEN1 O00255 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2992435 0.93 HPGD (0.42) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL2999853 0.89 HPGD (0.40) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL2986092 0.87 HPGD (0.39) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL3001955 0.86 LMNA (0.35) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL2991151 0.86 HPGD (0.41) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL24584550 0.84 HPGD (0.46) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL24584729 0.84 HPGD (0.46) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL384170 0.84 HPGD (0.46) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL24583813 0.84 HPGD (0.46) HPGDLMNASMN1; SMN2POLBKMT2A
SCHEMBL2990874 0.82 HPGD (0.40) HPGDLMNASMN1; SMN2POLBKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11681222-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2023-06-20 US disclosed
US-20220137508-A9 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2022-05-05 US disclosed
US-20210278764-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2021-09-09 US disclosed
US-11036133-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2021-06-15 US disclosed
US-20200124961-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2020-04-23 US disclosed
US-10620534-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2020-04-14 US disclosed
US-20190278175-A9 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2019-09-12 US disclosed
US-20190025695-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2019-01-24 US disclosed
US-10082733-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2018-09-25 US disclosed
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-20060223001-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-05 US disclosed
EP-1679314-A1 SILANE COMPOUND, POLYSILOXANE AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-07-12 EP disclosed
US-20060074139-A1 Acrylic copolymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-04-06 US disclosed
EP-1602975-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-12-07 EP disclosed
EP-1586594-A1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-10-19 EP disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-6677419-B1 REACTING STOICHIOMETRIC EXCESS OF UNSATURATED ALICYCLIC MONOMER WITH ANOTHER UNSATURATED MONOMER, HAVING LESS THAN TWO ELECTRON-WITHDRAWING GROUPS APPENDED TO UNSATURATION, IN PRESENCE OF FREE RADICAL INITIATOR INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-01-13 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed