SCHEMBL677952

SCHEMBL677952

C=C(C)C(=O)OC12CC3CC(C)(CC(O)(C3)C1)C2

nearest known ligand 0.36

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15290892 0.90 MEN1 (0.34) MEN1KMT2A
SCHEMBL1816760 0.90 MEN1 (0.37) MEN1KMT2A
SCHEMBL13383478 0.90 ALDH1A1 (0.32)
SCHEMBL15281489 0.90 ALDH1A1 (0.32)
SCHEMBL22266852 0.90 ALDH1A1 (0.32)
SCHEMBL74718 0.90 ALDH1A1 (0.32)
SCHEMBL31661874 0.90 ALDH1A1 (0.32)
SCHEMBL6559178 0.90 ALDH1A1 (0.32)
SCHEMBL685718 0.86 ALDH1A1 (0.31)
SCHEMBL5608060 0.85 MEN1 (0.33) MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 189 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2020137935-A1 COMPOUND, (CO)POLYMER, COMPOSITION, PATTERN FORMING METHOD, AND COMPOUND PRODUCTION METHOD 三菱瓦斯化学株式会社 2020-07-02 WO disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9346750-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-24 US disclosed
US-9346750-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-24 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
EP-2009498-A1 Pattern forming method FUJIFILM Corporation (JP) 2008-12-31 EP disclosed
US-20080274426-A1 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-06 US disclosed
US-20080274426-A1 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-06 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
EP-1767539-A1 ORGANIC ANTIMONY COMPOUND, PROCESS FOR PRODUCING THE SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER USING THE SAME, AND POLYMER OTSUKA CHEMICAL COMPANY, LTD. (JP) 2007-03-28 EP disclosed