SCHEMBL682897

SCHEMBL682897

CCC(C)(C#N)c1ccc(O)cc1

nearest known ligand 0.68

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 15/20 0.68
ESR2 Q92731 14/20 0.68
CYP3A4 P08684 3/20 0.46
LMNA P02545 1/20 0.46
TYR P14679 1/20 0.46
AR P10275 1/20 0.46
HPGD P15428 1/20 0.46
TSHR P16473 1/20 0.46
SLC6A2 P23975 1/20 0.46
SLC6A4 P31645 1/20 0.46
HTR6 P50406 1/20 0.46
ESRRG P62508 1/20 0.46
SLC6A3 Q01959 1/20 0.46
HSD17B10 Q99714 1/20 0.46
SHBG P04278 1/20 0.44
ALDH1A1 P00352 2/20 0.41
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10390700 0.85 ESR1 (0.64) ESR1ESR2CYP3A4LMNATYR
SCHEMBL10389814 0.82 ESR1 (0.60) ESR1ESR2CYP3A4LMNATYR
SCHEMBL10369991 0.80 ESR1 (0.44) ESR1ESR2CYP3A4LMNAAR
SCHEMBL8503879 0.80 ESR1 (0.44) ESR1ESR2CYP3A4LMNAHPGD
SCHEMBL1626918 0.80 ESR1 (0.44) ESR1ESR2TSHRSLC6A2SLC6A4
SCHEMBL682899 0.79 ALDH1A1 (0.52) ESR1ESR2ARHPGDHSD17B10
SCHEMBL24302110 0.79 CYP2D6 (0.43) ESR1ESR2CYP3A4LMNAALDH1A1
SCHEMBL1492823 0.79 CYP2D6 (0.43) ESR1ESR2CYP3A4LMNAALDH1A1
SCHEMBL9080223 0.78 PRKCQ (0.44) ESR1ESR2CYP3A4LMNATSHR
SCHEMBL10389822 0.78 ESR1 (0.54) ESR1ESR2CYP3A4LMNATYR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3745207-A1 PATTERN-FORMING METHOD USING ELECTRON BEAMS FOR EUV RAYS AND USE OF THIS METHOD FOR FORMING A FINE CIRCUIT OF A SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2020-12-02 EP disclosed
US-20180120705-A1 PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
EP-2721446-B1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORP (JP) 2017-11-22 EP disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9005870-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-04-14 US disclosed
US-8735048-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method FUJIFILM CORPORATION (JP) 2014-05-27 US disclosed
US-8642245-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same FUJIFILM CORPORATION (JP) 2014-02-04 US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 US disclosed
US-8546063-B2 Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays FUJIFILM CORPORATION (JP) 2013-10-01 US disclosed
US-8507174-B2 Positive resist composition, pattern forming method using the composition, and compound for use in the composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-7504193-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2009-03-17 US disclosed
US-20080220370-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-09-11 US disclosed
US-7332258-B2 Positive resist composition and process for forming pattern using the same FUJIFILM CORPORATION (JP) 2008-02-19 US disclosed
US-7326513-B2 Positive working resist composition FUJIFILM CORPORATION (JP) 2008-02-05 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-4916251-A Cyanoisoalkylation of hydroxy substituted aryl compounds using ketones THE DOW CHEMICAL COMPANY (US) 1990-04-10 US disclosed
US-4810814-A Preparation of cyanoalkylphenols THE DOW CHEMICAL COMPANY (US) 1989-03-07 US disclosed
US-4806673-A Preparation of cyanoalkylphenols from bisphenols THE DOW CHEMICAL COMPANY (US) 1989-02-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION CROCC, ACTR2, MRE11 ESR1 1050/4885ESR2 654/4885CYP3A4 4754/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.