SCHEMBL683167

SCHEMBL683167

COC(C)OCc1ccc(C)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AGXT P21549 2/20 0.48
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
CA9 Q16790 1/20 0.41
MAOB P27338 3/20 0.41
PARP10 Q53GL7 1/20 0.39
IDO1 P14902 4/20 0.38
KCNH2 Q12809 1/20 0.38
NPC1 O15118 3/20 0.37
RAB9A P51151 3/20 0.37
CYP1A2 P05177 1/20 0.35
CYP2A6 P11509 1/20 0.35
TAAR1 Q96RJ0 1/20 0.35
ACHE P22303 1/20 0.34
CASP3 P42574 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
SENP8 Q96LD8 1/20 0.34
SENP7 Q9BQF6 1/20 0.34
SENP6 Q9GZR1 1/20 0.34
PKM P14618 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29599465 0.89 AGXT (0.54) AGXTCA1CA2CA9MAOB
SCHEMBL8968738 0.83 TAAR1 (0.45) CA2IDO1TAAR1
SCHEMBL683150 0.83 TDP1 (0.37) IDO1CYP2A6TAAR1SMN1; SMN2
SCHEMBL8968693 0.82 IDO1 (0.47) MAOBIDO1NPC1RAB9ATAAR1
SCHEMBL682849 0.82 IDO1 (0.53) AGXTCA1CA2CA9MAOB
SCHEMBL683166 0.81 RCE1 (0.47) AGXTMAOBIDO1CYP1A2CYP2A6
SCHEMBL407132 0.80 AGXT (0.54) AGXTCA1CA2CA9MAOB
Ammonia Solution, Strong SCHEMBL28605909 0.78 AGXT (0.52) AGXTCA1CA2CA9MAOB
SCHEMBL4064511 0.77 PDCD1 (0.43) MAOBNPC1RAB9ACYP2A6SMN1; SMN2
SCHEMBL4060947 0.77 ACACB (0.33) MAOBIDO1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2090932-B1 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORP (JP) 2017-05-31 EP disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-8426103-B2 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-8426103-B2 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-8110333-B2 Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound FUJIFILM CORPORATION (JP) 2012-02-07 US disclosed
US-8110333-B2 Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound FUJIFILM CORPORATION (JP) 2012-02-07 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed