SCHEMBL683150

SCHEMBL683150

CCc1ccc(COC(C)OC)cc1

nearest known ligand 0.37

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.37
ALDH1A1 P00352 2/20 0.37
TSHR P16473 1/20 0.36
MAPK1 P28482 1/20 0.36
ATM Q13315 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
RXRA P19793 1/20 0.36
RXRB P28702 1/20 0.36
TP53 P04637 1/20 0.36
TAAR1 Q96RJ0 1/20 0.35
IDO1 P14902 4/20 0.35
PLAU P00749 1/20 0.35
CYP2A6 P11509 1/20 0.34
LPL P06858 1/20 0.34
LIPG Q9Y5X9 1/20 0.34
RCE1 Q9Y256 1/20 0.33
EGFR P00533 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15384190 0.83 CYP1A2 (0.48) ALDH1A1MAPK1L3MBTL1SMN1; SMN2CYP2A6
SCHEMBL683167 0.83 AGXT (0.48) SMN1; SMN2TAAR1IDO1CYP2A6
SCHEMBL8968738 0.83 TAAR1 (0.45) TAAR1IDO1
SCHEMBL8968693 0.82 IDO1 (0.47) ALDH1A1L3MBTL1TAAR1IDO1RCE1
SCHEMBL682849 0.82 IDO1 (0.53) IDO1
SCHEMBL683166 0.81 RCE1 (0.47) ALDH1A1TSHRTAAR1IDO1CYP2A6
SCHEMBL8750390 0.80 TDP1 (0.40) TDP1ALDH1A1TSHRMAPK1ATM
SCHEMBL683172 0.80 TAAR1 (0.42) TDP1ALDH1A1TSHRMAPK1ATM
SCHEMBL4060947 0.77 ACACB (0.33) IDO1RCE1
SCHEMBL4064511 0.77 PDCD1 (0.43) TDP1ALDH1A1TSHRSMN1; SMN2CYP2A6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2090932-B1 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORP (JP) 2017-05-31 EP disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-8426103-B2 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-8426103-B2 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-8110333-B2 Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound FUJIFILM CORPORATION (JP) 2012-02-07 US disclosed
US-8110333-B2 Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound FUJIFILM CORPORATION (JP) 2012-02-07 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed