Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | POLB | P06746 | 2/20 | 0.36 |
| ▸ | APEX1 | P27695 | 1/20 | 0.36 |
| ▸ | RECQL | P46063 | 1/20 | 0.36 |
| ▸ | BLM | P54132 | 1/20 | 0.36 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.36 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.36 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 2/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7187959 | 0.91 | ALDH1A1 (0.36) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL14531160 | 0.87 | LMNA (0.47) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL525277 | 0.87 | LMNA (0.47) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL14420618 | 0.86 | ALDH1A1 (0.39) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL29928799 | 0.82 | ALDH1A1 (0.39) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL16728405 | 0.82 | ALDH1A1 (0.39) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL19387893 | 0.82 | ALDH1A1 (0.39) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL19689472 | 0.79 | ALDH1A1 (0.36) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL13677436 | 0.78 | ALDH1A1 (0.34) | ALDH1A1KMT2ARAB9APOLBAPEX1 | |
| SCHEMBL13897067 | 0.78 | ALDH1A1 (0.53) | ALDH1A1KMT2ARAB9APOLBAPEX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6165672-A | Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2000-12-26 | — | — | US | claimed |
| US-6132926-A | ArF photoresist copolymers | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2000-10-17 | — | — | US | claimed |
| US-6045967-A | Method and device using ArF photoresist | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2000-04-04 | — | — | US | claimed |
| US-6028153-A | Copolymer resin of maleimide and alicyclic olefin-based monomers, photoresist containing the copolymer resin and the preparation thereof | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2000-02-22 | — | — | US | claimed |
| US-6692891-B2 | SEMICONDUCTOR | HYNIX SEMICONDUCTOR INC (KR) | 2004-02-17 | — | — | US | disclosed |
| US-6465147-B1 | MIXING A PHOTORESIST POLYMER HAVING ONE OR MORE HYDROXYL GROUPS AND A CROSS-LINKER COMPOUND HAVING TWO OR MORE ALDEHYDE GROUPS IN THE PRESENCE OF A PHOTOACID GENERATOR TO PRODUCE A NEGATIVE PHOTORESIST COMPOSITION | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2002-10-15 | — | — | US | disclosed |
| US-20020015917-A1 | Multi-oxygen containing compound for preventing acid diffusion, and photoresist composition containing the same | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD (KR) | 2002-02-07 | — | — | US | disclosed |
| US-20020012873-A1 | Photoresist composition containing photo radical generator with photoacid generator | HYNIX SEMICONDUCTOR INC. (KR) | 2002-01-31 | — | — | US | disclosed |
| US-6316162-B1 | PHOTORESISTS PATTERNS AND MALEIC ANHYDRIDE-NORBORNENE ESTER COPOLYMERS AND PHOTOACID GENERATORS, COATINGS AND EXPOSURE, SPRAYING SILYLATION AND DRY ETCHING | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2001-11-13 | — | — | US | disclosed |
| US-6225020-B1 | SUCH AS USED IN 4 G OR 16 G DRAM SEMICONDUCTOR DEVICES USING A LIGHT SOURCE SUCH AS ARF, AN E-BEAM, EUV, OR AN ION BEAM, PHOTORESIST FOR THE TOP SURFACE IMAGE (TSI) PROCESS USING SILYLATION, MALEIMIDE ANDNORBONENE CARBOXYLATE COMONOMERS, | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2001-05-01 | — | — | US | disclosed |
| US-6165672-A | Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2000-12-26 | — | — | US | disclosed |
| US-6045967-A | Method and device using ArF photoresist | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2000-04-04 | — | — | US | disclosed |
| US-6028153-A | Copolymer resin of maleimide and alicyclic olefin-based monomers, photoresist containing the copolymer resin and the preparation thereof | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2000-02-22 | — | — | US | disclosed |