SCHEMBL6852023

SCHEMBL6852023

C=CC(=O)OC1C2CC3CC(C2)C(O)C1C3

nearest known ligand 0.34

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP2C9 P11712 1/20 0.34
HSD11B1 P28845 1/20 0.33
EPHX1 P07099 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6536762 0.88
SCHEMBL18973585 0.88 HSD11B1 (0.35) HSD11B1EPHX1
SCHEMBL14593964 0.84 CYP2C9 (0.31) CYP2C9HSD11B1
SCHEMBL333419 0.82 HSD11B1 (0.46) CYP2C9HSD11B1EPHX1
SCHEMBL19919330 0.81
SCHEMBL1592363 0.80 TSHR (0.33) HSD11B1EPHX1
SCHEMBL8103089 0.79 CYP2C9 (0.37) CYP2C9HSD11B1EPHX1
SCHEMBL1224877 0.78 CYP2C9 (0.32) CYP2C9HSD11B1
Acrylic Acid SCHEMBL5147956 0.77 CYP2C9 (0.41) CYP2C9HSD11B1
SCHEMBL19223257 0.75 HSD11B1 (0.37) CYP2C9HSD11B1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1964893-B2 Ink composition, inkjet recording method, printed material, and ink set FUJIFILM CORP (JP) 2021-11-24 EP disclosed
EP-1964893-B1 Ink composition, inkjet recording method, printed material, and ink set FUJIFILM CORP (JP) 2018-01-24 EP disclosed
US-8932687-B2 Process for producing molded printed material, and molded printed material FUJIFILM CORPORATION (JP) 2015-01-13 US disclosed
US-8932687-B2 Process for producing molded printed material, and molded printed material FUJIFILM CORPORATION (JP) 2015-01-13 US disclosed
EP-1975213-B1 Ink composition, injet recording method, printed material, and process for producing lithographic printing plate FUJIFILM CORP (JP) 2013-03-27 EP disclosed
US-8344045-B2 Ink composition, inkjet recording method, printed material, and process for producing molded printed material FUJIFILM CORPORATION (JP) 2013-01-01 US disclosed
US-8344045-B2 Ink composition, inkjet recording method, printed material, and process for producing molded printed material FUJIFILM CORPORATION (JP) 2013-01-01 US disclosed
US-8232330-B2 Nonaqueous ink, image-recording method, image-recording apparatus and recorded article FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
US-8232330-B2 Nonaqueous ink, image-recording method, image-recording apparatus and recorded article FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
US-8211508-B2 radiation curing ink cures with high sensitivity to form a high quality, durable image resistant to cracking, peeling and has excellent impact resistance, flexibility, and adhesion; cyclic monofunctional acrylic or N-vinyl monomers FUJIFILM CORPORATION (JP) 2012-07-03 US disclosed
US-20080008966-A1 Ink composition, inkjet recording method, printed material, and process for producing lithographic printing plate FUJIFILM CORPORATION (JP) 2008-01-10 US disclosed
US-6794112-B2 COMPRISES ALKALI SOLUBLE POLYMER (POLYVINYLPHENOL), PHOTOACID GENERATOR (TRIPHENYL SULFONIUM TRIFLUOROMETHANESULFONATE), AND ADAMANTYL ALCOHOL CAPABLE OF DEHYDRATION BONDING WITH POLYMER; ANTISWELLING; IMPROVED RESOLUTION FUJITSU LIMITED (JP) 2004-09-21 US disclosed
US-6794113-B2 COMPRISES ALKALI-SOLUBLE POLYMER (POLYVINYLPHENOL), PHOTOACID GENERATOR (TRIPHENYL SULFONIUM TRIFLUOROMETHANESULFONIC ACID), AND ADAMANTYL ALCOHOL CAPABLE OF DEHYDRATION BONDING WITH POLYMER; ANTISWELLING; IMPROVED RESOLUTION FUJITSU LIMITED (JP) 2004-09-21 US disclosed
US-6787288-B2 COMPRISES ALKALI SOLUBLE POLYMER (POLYVINYLPHENOL), PHOTOACID GENERATOR (TRIPHENYL SULFONIUM TRIFLUOROMETHANSULFONATE), AND ADAMANTYL ALCOHOL CAPABLE OF DEHYDRATION BONDING WITH POLYMER; ANTISWELLING; IMPROVED RESOLUTION FUJITSU LIMITED (JP) 2004-09-07 US disclosed
US-6773867-B2 COATING A NEGATIVE RESIST ONTO A TARGET SUBSTRATE, SELECTIVELY EXPOSING FORMED RESIST FILM TO IMAGE-FORMING RADIATION THAT CAN INDUCE DECOMPOSITION OF PHOTO ACID GENERATOR OF RESIST; DEVELOPING EXPOSED RESIST FILM WITH A BASIC AQUEOUS SOLUTION FUJITSU LIMITED (JP) 2004-08-10 US disclosed
US-20030143482-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-31 US disclosed
US-20030138724-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-24 US disclosed
US-20030138725-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-24 US disclosed
US-20030138726-A1 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices FUJITSU LIMITED (JP) 2003-07-24 US disclosed
US-6506534-B1 A negative resist composition developable with basic solutions and being itself soluble in basic aqueous solutions but, upon exposure to said image-forming radiation, being rendered insoluble in basic aqueous solutions at its exposed sections FUJITSU LIMITED (JP) 2003-01-14 US disclosed