Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 1/20 | 0.47 |
| ▸ | EPHX1 | P07099 | 2/20 | 0.41 |
| ▸ | CHRM3 | P20309 | 7/20 | 0.41 |
| ▸ | NAAA | Q02083 | 2/20 | 0.39 |
| ▸ | HTT | P42858 | 2/20 | 0.37 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | GPR35 | Q9HC97 | 2/20 | 0.36 |
| ▸ | CA12 | O43570 | 1/20 | 0.35 |
| ▸ | CA1 | P00915 | 1/20 | 0.35 |
| ▸ | CA2 | P00918 | 1/20 | 0.35 |
| ▸ | CA9 | Q16790 | 1/20 | 0.35 |
| ▸ | PDK1 | Q15118 | 1/20 | 0.35 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.35 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.35 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.35 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL685797 | 0.98 | CYP19A1 (0.50) | CYP19A1EPHX1CHRM3NAAAHTT | |
| SCHEMBL686208 | 0.98 | CYP19A1 (0.50) | CYP19A1EPHX1CHRM3NAAAHTT | |
| SCHEMBL686006 | 0.98 | CYP19A1 (0.50) | CYP19A1EPHX1CHRM3NAAAHTT | |
| SCHEMBL685798 | 0.96 | CYP19A1 (0.44) | CYP19A1EPHX1CHRM3NAAAHTT | |
| SCHEMBL19105216 | 0.85 | CYP19A1 (0.50) | CYP19A1EPHX1CHRM3NAAAHTT | |
| SCHEMBL685924 | 0.83 | CYP19A1 (0.35) | CYP19A1CHRM3HTTSMN1; SMN2 | |
| SCHEMBL1682649 | 0.82 | CYP19A1 (0.50) | CYP19A1EPHX1CHRM3NAAAHTT | |
| SCHEMBL27976432 | 0.82 | CYP19A1 (0.42) | CYP19A1EPHX1CHRM3NAAAHTT | |
| SCHEMBL14648562 | 0.82 | GABRP (0.34) | CYP19A1EPHX1CHRM3 | |
| SCHEMBL28482215 | 0.82 | CYP19A1 (0.47) | CYP19A1EPHX1CHRM3NAAAHTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2329320-B1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD | FUJIFILM CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9268226-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9260407-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-16 | — | — | US | disclosed |
| US-9229320-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-20150301451-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9063414-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-23 | — | — | US | disclosed |
| US-20150132698-A1 | RESIN AND RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-05-14 | — | — | US | disclosed |
| US-8993210-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-03-31 | — | — | US | disclosed |
| US-8921029-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-12-30 | — | — | US | disclosed |
| US-20110059400-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-03-10 | — | — | US | disclosed |
| US-20110053082-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-03-03 | — | — | US | disclosed |
| US-20110053086-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY,LIMITED (JP) | 2011-03-03 | — | — | US | disclosed |
| US-20110039208-A1 | PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-17 | — | — | US | disclosed |
| US-20110039209-A1 | COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-17 | — | — | US | disclosed |
| US-20110033804-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20110014566-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100330497-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110059400-A1 | PHOTORESIST COMPOSITION | C1R, C1S, CCNT1 | CYP19A1 2284/4885EPHX1 1871/4885CHRM3 516/4885 |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | C1S, H1-0, H1-2 | CYP19A1 2654/4885EPHX1 3047/4885CHRM3 372/4885 |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | XPA, XPOT, ERCC4 | CYP19A1 2872/4885EPHX1 3648/4885CHRM3 3909/4885 |
| US-20110014566-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | XPA, NPPA, ERCC4 | CYP19A1 1365/4885EPHX1 2467/4885CHRM3 3108/4885 |
| US-20110053086-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | OR10J3, C1R, C9 | CYP19A1 1806/4885EPHX1 1277/4885CHRM3 1016/4885 |
| US-20110039209-A1 | COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME | RCOR3, RCN1, HRH4 | CYP19A1 1414/4885EPHX1 1816/4885CHRM3 1151/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.