⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL685765 | 0.88 | — | — | |
| SCHEMBL13701177 | 0.84 | — | — | |
| SCHEMBL12783214 | 0.84 | TGM2 (0.30) | — | |
| SCHEMBL14330368 | 0.82 | — | — | |
| SCHEMBL19996962 | 0.82 | KDM4E (0.30) | — | |
| SCHEMBL24746359 | 0.82 | — | — | |
| SCHEMBL685664 | 0.82 | KDM4E (0.30) | — | |
| SCHEMBL21432112 | 0.82 | KDM4E (0.30) | — | |
| SCHEMBL13588094 | 0.82 | — | — | |
| SCHEMBL22114924 | 0.81 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9405187-B2 | Salt, acid generator and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-02 | — | — | US | disclosed |
| US-9405187-B2 | Salt, acid generator and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-02 | — | — | US | disclosed |
| US-9346750-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-24 | — | — | US | disclosed |
| US-9346750-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-24 | — | — | US | disclosed |
| US-9268226-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9268226-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9229320-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-20100075257-A1 | Resin and Chemically Amplified Resist Composition Comprising the Same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-25 | — | — | US | disclosed |
| US-20100062365-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-11 | — | — | US | disclosed |
| US-7632623-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2009-12-15 | — | — | US | disclosed |
| US-7632623-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2009-12-15 | — | — | US | disclosed |
| US-20090264565-A1 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-20090263742-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |