SCHEMBL685664

SCHEMBL685664

C=C(C)C(=O)OC1C2CC3C1OC(=O)C3(C#N)C2

nearest known ligand 0.30

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.30
NPC1 O15118 1/20 0.30
POLB P06746 1/20 0.30
MAPT P10636 1/20 0.30
PKM P14618 1/20 0.30
HTT P42858 1/20 0.30
RECQL P46063 1/20 0.30
RAB9A P51151 1/20 0.30
ATM Q13315 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19996962 1.00 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM
SCHEMBL21432112 1.00 KDM4E (0.30) KDM4ENPC1POLBMAPTPKM
SCHEMBL13588094 0.91
SCHEMBL17247237 0.90
SCHEMBL27417495 0.89
SCHEMBL22114924 0.89
SCHEMBL22137264 0.88
SCHEMBL21235007 0.88
SCHEMBL20468459 0.88
SCHEMBL685977 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 656 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12461443-B2 Photoresist resin, method for producing photoresist resin, photoresist resin composition, and method for forming pattern DAICEL CORPORATION (JP) 2025-11-04 US disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
EP-4317204-A1 MANUFACTURING METHOD FOR POLYMER HAVING THIOCARBONYLTHIO GROUP REMOVED FUJIFILM Corporation (JP) 2024-02-07 EP disclosed
EP-4317197-A1 METHOD FOR PRODUCING POLYMER BY REVERSIBLE ADDITION-FRAGMENTATION CHAIN TRANSFER POLYMERIZATION FUJIFILM Corporation (JP) 2024-02-07 EP disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-20230400769-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-12-14 US disclosed
US-20230400765-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230400765-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20080319160-A1 Polycyclic Ester Containing Cyano Group and Lactone Skeleton DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2008-12-25 US disclosed
US-20080319160-A1 Polycyclic Ester Containing Cyano Group and Lactone Skeleton DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2008-12-25 US disclosed
US-20080305429-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-12-11 US disclosed
US-20080305429-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-12-11 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
EP-1930328-A1 CYANO-CONTAINING POLYCYCLIC ESTERS HAVING LACTONE SKELETONS DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2008-06-11 EP disclosed
JP-2008081404-A METHOD FOR PRODUCING 2-(METH)ACRYLOYLOXY-6-CYANO-5-OXO-4-OXATRICYCLO[4.2.1.03,7]NONANE DAICEL CHEM IND LTD 2008-04-10 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230400765-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND RFT1, RER1, AFF1 KDM4E 3321/4885NPC1 1170/4885POLB 2373/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.