⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Carbamic Acid SCHEMBL11772614 | 0.90 | — | — | |
| Acrylamide SCHEMBL9245277 | 0.88 | — | — | |
| SCHEMBL28069296 | 0.83 | TDP1 (0.63) | — | |
| Acetone SCHEMBL11650302 | 0.83 | — | — | |
| Urea SCHEMBL758385 | 0.80 | ALDH1A1 (0.44) | — | |
| Acetic Acid SCHEMBL9511037 | 0.80 | — | — | |
| Urea SCHEMBL8217038 | 0.80 | ALDH1A1 (0.44) | — | |
| Hydrogen Peroxide SCHEMBL4369407 | 0.78 | — | — | |
| Hydrogen Peroxide SCHEMBL4365564 | 0.78 | ALDH1A1 (0.31) | — | |
| Methyl Alcohol SCHEMBL28155292 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1802606-B | Resist pattern swelling material, and method for patterning using same | FUJITSU LTD | 2012-12-05 | — | — | CN | claimed |
| US-11718082-B2 | Method of manufacturing fine pattern and method of manufacturing display device using the same | MERCK PATENT GMBH (DE) | 2023-08-08 | — | — | US | disclosed |
| US-20210187930-A1 | METHOD OF MANUFACTURING FINE PATTERN AND METHOD OF MANUFACTURING DISPLAY DEVICE USING THE SAM | MERCK PATENT GMBH (DE) | 2021-06-24 | — | — | US | disclosed |
| US-20210191263-A1 | METHOD OF MANUFACTURING HIGH-DEFINED PATTERN AND METHOD OF MANUFACTURING DISPLAY DEVICE USING THE SAME | MERCK PATENT GMBH (DE) | 2021-06-24 | — | — | US | disclosed |
| CN-104752171-B | gap filling material and method | 台湾积体电路制造股份有限公司 | 2018-02-27 | — | — | CN | disclosed |
| CN-1802606-B | Resist pattern swelling material, and method for patterning using same | FUJITSU LTD | 2012-12-05 | — | — | CN | disclosed |
| EP-2397901-A1 | Resist pattern swelling material, and method for patterning using same | Fujitsu Limited (JP) | 2011-12-21 | — | — | EP | disclosed |
| CN-1310295-C | Material for forming fine pattern and method for manufacturing semiconductor device using the same | MITSUBISHI ELECTRIC CORP (JP) | 2007-04-11 | — | — | CN | disclosed |
| CN-1802606-A | Resist pattern swelling material, and method for patterning using same | FUJITSU LTD (JP) | 2006-07-12 | — | — | CN | disclosed |
| EP-1315997-A1 | RESIST PATTERN SWELLING MATERIAL, AND METHOD FOR PATTERNING USING SAME | FUJITSU LIMITED (JP) | 2003-06-04 | — | — | EP | disclosed |
| WO-2003014830-A1 | RESIST PATTERN SWELLING MATERIAL, AND METHOD FOR PATTERNING USING SAME | FUJITSU LIMITED (JP) | 2003-02-20 | — | — | WO | disclosed |
| CN-1199922-A | Material for forming fine pattern and method for manufacturing semiconductor device using the same | MITSUBISHI ELECTRIC CORP (JP) | 1998-11-25 | — | — | CN | disclosed |