SCHEMBL700630

SCHEMBL700630

CC[S+](CC)c1ccc(C#N)c2ccccc12

nearest known ligand 0.47

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
IMPDH2 P12268 2/20 0.47
IMPDH1 P20839 1/20 0.47
AR P10275 9/20 0.40
KDM4E B2RXH2 1/20 0.38
ALDH1A1 P00352 1/20 0.38
GAA P10253 1/20 0.38
MAPT P10636 1/20 0.38
SLC22A12 Q96S37 2/20 0.37
CYP19A1 P11511 1/20 0.37
TSHR P16473 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702241 0.79 IMPDH2 (0.52) IMPDH2IMPDH1ARKDM4EALDH1A1
SCHEMBL3106541 0.79 SLC22A12 (0.34) IMPDH2IMPDH1ARSLC22A12
SCHEMBL3120888 0.78 SLC22A12 (0.33) IMPDH2IMPDH1SLC22A12
SCHEMBL151936 0.76 IMPDH2 (0.64) IMPDH2IMPDH1ARKDM4EALDH1A1
SCHEMBL29489135 0.76 IMPDH2 (0.64) IMPDH2IMPDH1ARKDM4EALDH1A1
SCHEMBL11193357 0.73 IMPDH2 (0.61) IMPDH2IMPDH1ARKDM4EALDH1A1
SCHEMBL701579 0.73 CYP1A2 (0.54) KDM4EALDH1A1MAPTTSHR
SCHEMBL3883392 0.72 IDO1 (0.52)
SCHEMBL12229649 0.72 IMPDH2 (0.52) IMPDH2IMPDH1ARKDM4EALDH1A1
SCHEMBL11228244 0.71 IMPDH2 (0.59) IMPDH2IMPDH1ARKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023157801-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE JSR株式会社 2023-08-24 WO disclosed
US-10423083-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2019-09-24 US disclosed
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
US-20170176878-A1 CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE JSR CORPORATION (JP) 2017-06-22 US disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9259668-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2016-02-16 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-20140363773-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-12-11 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7108955-B2 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-19 US disclosed
EP-1085379-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-01-04 EP disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed