Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TET2 | Q6N021 | 5/20 | 0.50 |
| ▸ | TET3 | O43151 | 1/20 | 0.32 |
| ▸ | TET1 | Q8NFU7 | 1/20 | 0.32 |
| ▸ | GRIK1 | P39086 | 1/20 | 0.31 |
| ▸ | GRIK2 | Q13002 | 1/20 | 0.31 |
| ▸ | GRM1 | Q13255 | 1/20 | 0.31 |
| ▸ | GRM2 | Q14416 | 1/20 | 0.31 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.31 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL701455 | 0.87 | TET2 (0.47) | TET2TET3TET1 | |
| SCHEMBL704503 | 0.85 | TET2 (0.46) | TET2 | |
| SCHEMBL261639 | 0.82 | TET2 (0.45) | TET2TET3TET1GRIK1GRIK2 | |
| SCHEMBL221789 | 0.81 | TET2 (0.43) | TET2TET3TET1GRIK1GRIK2 | |
| SCHEMBL532860 | 0.80 | TET2 (0.44) | TET2TET3TET1GRIK1GRIK2 | |
| SCHEMBL14556955 | 0.79 | TET2 (0.63) | TET2TET3TET1GRIK1GRIK2 | |
| SCHEMBL10685660 | 0.78 | LMNA (0.40) | TET2HSD17B10 | |
| SCHEMBL422185 | 0.77 | TET2 (0.41) | TET2 | |
| SCHEMBL29147592 | 0.77 | TET2 (0.41) | TET2 | |
| SCHEMBL15999585 | 0.77 | TET2 (0.42) | TET2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170160637-A9 | UPPER LAYER-FORMING COMPOSITION AND RESIST PATTERNING METHOD | JSR CORPORATION (JP) | 2017-06-08 | — | — | US | disclosed |
| US-9500950-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9329474-B2 | Photoresist composition and resist pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160109801-A1 | UPPER LAYER-FORMING COMPOSITION AND RESIST PATTERNING METHOD | JSR CORPORATION (JP) | 2016-04-21 | — | — | US | disclosed |
| US-20160062237-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2016-03-03 | — | — | US | disclosed |
| US-9261789-B2 | Liquid immersion lithography upper-layer film-forming composition and photoresist pattern-forming method | JSR CORPORATION (JP) | 2016-02-16 | — | — | US | disclosed |
| US-9213236-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-12-15 | — | — | US | disclosed |
| US-9046765-B2 | Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-8895229-B2 | Composition for formation of upper layer film, and method for formation of photoresist pattern | JSR CORPORATION (JP) | 2014-11-25 | — | — | US | disclosed |
| US-8808974-B2 | Method for forming pattern | JSR CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-8182977-B2 | Polymer and positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8124314-B2 | Radiation-sensitive composition | JSR CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20110212401-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2011-09-01 | — | — | US | disclosed |
| US-20100285405-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-11-11 | — | — | US | disclosed |
| US-20100239981-A1 | POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100221664-A1 | RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2010-09-02 | — | — | US | disclosed |
| US-20100112475-A1 | RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2010-05-06 | — | — | US | disclosed |
| US-20100068650-A1 | POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION | JSR CORPORATION (JP) | 2010-03-18 | — | — | US | disclosed |
| US-20100021852-A1 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2010-01-28 | — | — | US | disclosed |
| US-20090202945-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2009-08-13 | — | — | US | disclosed |