SCHEMBL704503

SCHEMBL704503

C=C(CCCCC(O)(C(F)(F)F)C(F)(F)F)C(=O)O

nearest known ligand 0.46

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TET2 Q6N021 2/20 0.46
TBXAS1 P24557 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL701455 0.94 TET2 (0.47) TET2TBXAS1
SCHEMBL701230 0.85 TET2 (0.50) TET2
SCHEMBL3319531 0.84 TET2 (0.41) TET2TBXAS1
SCHEMBL8165231 0.83 TET2 (0.39) TET2TBXAS1
SCHEMBL9182825 0.82 TBXAS1 (0.40) TET2TBXAS1
SCHEMBL2976462 0.78 TET2 (0.42) TET2TBXAS1
SCHEMBL2025802 0.78 TBXAS1 (0.47) TET2TBXAS1
SCHEMBL676134 0.77 TET2 (0.41) TET2TBXAS1
SCHEMBL9063878 0.77 TET2 (0.36) TET2TBXAS1
SCHEMBL16318693 0.75 TET2 (0.42) TET2TBXAS1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9500950-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2016-11-22 US disclosed
US-9329474-B2 Photoresist composition and resist pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160062237-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2016-03-03 US disclosed
US-9213236-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-12-15 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-8895229-B2 Composition for formation of upper layer film, and method for formation of photoresist pattern JSR CORPORATION (JP) 2014-11-25 US disclosed
US-8808974-B2 Method for forming pattern JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20140162190-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2014-06-12 US disclosed
US-8697344-B2 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern JSR CORPORATION (JP) 2014-04-15 US disclosed
US-8697343-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2014-04-15 US disclosed
US-8124314-B2 Radiation-sensitive composition JSR CORPORATION (JP) 2012-02-28 US disclosed
US-20110262865-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-10-27 US disclosed
US-20110212401-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2011-09-01 US disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100112475-A1 RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2010-05-06 US disclosed
US-20100068650-A1 POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION JSR CORPORATION (JP) 2010-03-18 US disclosed
US-20100021852-A1 COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN JSR CORPORATION (JP) 2010-01-28 US disclosed
US-20090202945-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-08-13 US disclosed