SCHEMBL702064

SCHEMBL702064

CC[Si](CC[Si](CC)(Oc1ccccc1)Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 5/20 0.39
CA4 P22748 1/20 0.39
TSHR P16473 1/20 0.36
KCNA3 P22001 1/20 0.36
CHRNB2 P17787 2/20 0.35
CHRNB4 P30926 2/20 0.35
CHRNA3 P32297 2/20 0.35
CHRNA7 P36544 2/20 0.35
CHRNA4 P43681 2/20 0.35
L3MBTL1 Q9Y468 1/20 0.34
RECQL P46063 1/20 0.33
TP53 P04637 1/20 0.33
KCNH2 Q12809 1/20 0.33
LMNA P02545 1/20 0.33
HTR1D P28221 1/20 0.33
HTR1B P28222 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706553 0.91 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL28448620 0.91 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL705625 0.91 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL427947 0.91 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL28453252 0.88 LTA4H (0.44) LTA4HTSHRKCNA3RECQLKCNH2
SCHEMBL705199 0.86 LTA4H (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL1482430 0.86 LTA4H (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL705984 0.84 LTA4H (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL19816730 0.84 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL3888589 0.83 LTA4H (0.41) LTA4HCA4TSHRKCNA3CHRNB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed