SCHEMBL705984

SCHEMBL705984

CCC[Si](CC[Si](CCC)(Oc1ccccc1)Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.39
CA4 P22748 1/20 0.37
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
CHRNB2 P17787 2/20 0.34
CHRNB4 P30926 2/20 0.34
CHRNA3 P32297 2/20 0.34
CHRNA7 P36544 2/20 0.34
CHRNA4 P43681 2/20 0.34
MAPT P10636 1/20 0.33
ALOX12 P18054 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
KCNH2 Q12809 2/20 0.33
RECQL P46063 1/20 0.33
MLNR O43193 1/20 0.33
NR1I2 O75469 1/20 0.33
ESR1 P03372 1/20 0.33
NR3C1 P04150 1/20 0.33
PGR P06401 1/20 0.33
ADRB2 P07550 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL427597 0.98 LTA4H (0.41) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL702538 0.92 LTA4H (0.41) LTA4HCA4TSHRKCNA3MAPT
SCHEMBL705260 0.92 LTA4H (0.41) LTA4HCA4TSHRKCNA3MAPT
SCHEMBL28449543 0.90 LTA4H (0.44) LTA4HTSHRKCNA3MAPTKCNH2
SCHEMBL28448620 0.89 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL704153 0.89 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL19816467 0.88 CA4 (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL10627368 0.86 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL430222 0.85 LTA4H (0.47) LTA4HCA4TSHRKCNA3MAPT
SCHEMBL702064 0.84 LTA4H (0.39) LTA4HCA4TSHRKCNA3CHRNB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed