SCHEMBL702433

SCHEMBL702433

CCCCO[Si](CCCC)(CCCC)CCC[Si](CCCC)(CCCC)OCCCC

nearest known ligand 0.38

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.38
ADRB1 P08588 1/20 0.38
ADRB3 P13945 1/20 0.38
TSHR P16473 2/20 0.33
CYP3A4 P08684 1/20 0.33
ALDH1A1 P00352 1/20 0.32
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
LMNA P02545 1/20 0.30
ATM Q13315 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702931 0.97 ADRB2 (0.39) ADRB2ADRB1ADRB3TSHRCYP3A4
Ammonia Solution, Strong SCHEMBL27834149 0.95 ADRB2 (0.38) ADRB2ADRB1ADRB3TSHRCYP3A4
Phosphine SCHEMBL27528421 0.95 CYP3A4 (0.39) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL706862 0.95 ADRB2 (0.38) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL704162 0.95 ADRB2 (0.38) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL702101 0.92 ADRB2 (0.36) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL708161 0.90 ADRB2 (0.32) ADRB2ADRB1ADRB3TSHRLMNA
SCHEMBL23549404 0.89 ADRB2 (0.35) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL31286324 0.87 THRB (0.40) ADRB2ADRB1ADRB3TSHRCA1
SCHEMBL2499159 0.87 THRB (0.40) ADRB2ADRB1ADRB3TSHRCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed