SCHEMBL702572

SCHEMBL702572

C=C(C)C(=O)OCC(F)(F)C(F)(F)C(F)(F)C(C)(F)F

nearest known ligand 0.40

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.40
THRB P10828 1/20 0.38
ALDH1A1 P00352 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26362926 0.98 TSHR (0.39) TSHRTHRBALDH1A1
SCHEMBL13040455 0.95 TSHR (0.41) TSHRTHRBALDH1A1
SCHEMBL246414 0.93 TSHR (0.45) TSHRTHRBALDH1A1
SCHEMBL248056 0.91 TSHR (0.44) TSHRTHRBALDH1A1
SCHEMBL247163 0.91 TSHR (0.44) TSHRTHRBALDH1A1
SCHEMBL246347 0.91 TSHR (0.44) TSHRTHRBALDH1A1
SCHEMBL246497 0.91 TSHR (0.44) TSHRTHRBALDH1A1
SCHEMBL248332 0.91 TSHR (0.44) TSHRTHRBALDH1A1
SCHEMBL248380 0.91 TSHR (0.44) TSHRTHRBALDH1A1
SCHEMBL246626 0.89 TSHR (0.45) TSHRTHRBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9529259-B2 Radiation-sensitive resin composition, resist pattern-forming method, acid diffusion control agent, compound, and method for producing compound JSR CORPORATION (JP) 2016-12-27 US disclosed
US-9329474-B2 Photoresist composition and resist pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20150355539-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, COMPOUND, AND METHOD FOR PRODUCING COMPOUND JSR CORPORATION (JP) 2015-12-10 US disclosed
US-9158196-B2 Radiation-sensitive resin composition and pattern-forming method JSR CORPORATION (JP) 2015-10-13 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-8765355-B2 Radiation sensitive resin composition, method for forming a pattern, polymer and compound JSR CORPORATION (JP) 2014-07-01 US disclosed
US-8669042-B2 Resist pattern-forming method JSR CORPORATION (JP) 2014-03-11 US disclosed
US-8647810-B2 Resist lower layer film-forming composition, polymer, resist lower layer film, pattern-forming method, and method of producing semiconductor device JSR CORPORATION (JP) 2014-02-11 US disclosed
US-20140023968-A1 RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM JSR CORPORATION (JP) 2014-01-23 US disclosed
US-20130280657-A1 PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-10-24 US disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-20130078571-A1 PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2013-03-28 US disclosed
US-20120276482-A1 RADIATION SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A PATTERN, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-11-01 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed
US-8182977-B2 Polymer and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2012-05-22 US disclosed
US-8124314-B2 Radiation-sensitive composition JSR CORPORATION (JP) 2012-02-28 US disclosed
US-20110212401-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2011-09-01 US disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120276482-A1 RADIATION SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A PATTERN, POLYMER AND COMPOUND RAD51, MRE11, RER1 TSHR 4589/4885THRB 4556/4885ALDH1A1 1414/4885
US-20150355539-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, COMPOUND, AND METHOD FOR PRODUCING COMPOUND RER1, MSR1, MRPS35 TSHR 1775/4885THRB 3815/4885ALDH1A1 2285/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.