SCHEMBL702748

SCHEMBL702748

[SiH3]OCCCCCCC(c1ccccc1)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
HRH1 P35367 6/20 0.50
HTR2A P28223 5/20 0.50
SIGMAR1 Q99720 4/20 0.47
CYP19A1 P11511 4/20 0.46
KCNH2 Q12809 1/20 0.41
TBXAS1 P24557 1/20 0.41
CYP2D6 P10635 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702332 1.00 HRH1 (0.50) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL705235 0.98 HRH1 (0.52) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL704990 0.92 HRH1 (0.54) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL242578 0.83 HRH1 (0.50) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL9073997 0.80 HRH1 (0.71) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL11403346 0.79 HRH1 (0.46) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL6059940 0.79 HRH1 (0.46) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL11124054 0.79 HRH1 (0.46) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL1406142 0.79 HRH1 (0.46) HRH1HTR2ASIGMAR1CYP19A1KCNH2
SCHEMBL11795957 0.79 HRH1 (0.46) HRH1HTR2ASIGMAR1CYP19A1KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed