Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH1 | P35367 | 6/20 | 0.52 |
| ▸ | HTR2A | P28223 | 5/20 | 0.52 |
| ▸ | SIGMAR1 | Q99720 | 4/20 | 0.48 |
| ▸ | CYP19A1 | P11511 | 4/20 | 0.45 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.42 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.39 |
| ▸ | TBXAS1 | P24557 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL702748 | 0.98 | HRH1 (0.50) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL702332 | 0.98 | HRH1 (0.50) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL704990 | 0.94 | HRH1 (0.54) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL242578 | 0.85 | HRH1 (0.50) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL9073997 | 0.82 | HRH1 (0.71) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL28443464 | 0.79 | HRH1 (0.52) | HRH1HTR2ASIGMAR1CYP19A1TBXAS1 | |
| SCHEMBL11124054 | 0.77 | HRH1 (0.46) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL11403346 | 0.77 | HRH1 (0.46) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL6059940 | 0.77 | HRH1 (0.46) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 | |
| SCHEMBL9446574 | 0.77 | HRH1 (0.46) | HRH1HTR2ASIGMAR1CYP19A1KCNH2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9546237-B2 | Stabilization of polymers that contain a hydrolyzable functionality | BRIDGESTONE CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20130331520-A1 | STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY | BRIDGESTONE CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-5439746-A | Formed by coating or impregnating a reinforcement sheet and curing; mechanical strength; corrosion and heat resistance; electrical properties | KABUSHIKI KAISHA TOSHIBA (JP) | 1995-08-08 | — | — | US | disclosed |