⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15091666 | 0.97 | — | — | |
| SCHEMBL15091804 | 0.97 | — | — | |
| SCHEMBL15091564 | 0.97 | — | — | |
| SCHEMBL15091915 | 0.97 | — | — | |
| SCHEMBL708022 | 0.93 | — | — | |
| SCHEMBL15091525 | 0.88 | — | — | |
| SCHEMBL20970132 | 0.87 | TSHR (0.35) | — | |
| SCHEMBL15091966 | 0.86 | — | — | |
| SCHEMBL703522 | 0.85 | — | — | |
| SCHEMBL23701281 | 0.82 | ALDH1A1 (0.38) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20210384554-A1 | LITHIUM SECONDARY BATTERY ELECTROLYTE FOR REDUCING INTERNAL RESISTANCE OF BATTERY AND LITHIUM SECONDARY BATTERY | GUANGZHOU TINCI MATERIALS TECHNOLOGY CO., LTD. (CN) | 2021-12-09 | — | — | US | disclosed |
| EP-3819976-A1 | LITHIUM SECONDARY BATTERY ELECTROLYTE FOR REDUCING INTERNAL RESISTANCE OF BATTERY AND LITHIUM SECONDARY BATTERY | Guangzhou Tinci Materials Technology Co., Ltd (CN) | 2021-05-12 | — | — | EP | disclosed |
| US-10186732-B2 | Nonaqueous electrolyte solution for batteries, and nonaqueous electrolyte secondary battery using same | DENSO CORPORATION (JP) | 2019-01-22 | — | — | US | disclosed |
| EP-2642579-B1 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY | ADEKA CORP (JP) | 2017-07-26 | — | — | EP | disclosed |
| EP-2642580-B1 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY | ADEKA CORP (JP) | 2017-03-29 | — | — | EP | disclosed |
| US-9583280-B2 | Electricity storage device | ADEKA CORPORATION (JP) | 2017-02-28 | — | — | US | disclosed |
| US-20150206664-A1 | ELECTRICITY STORAGE DEVICE | ADEKA CORPORATION (JP) | 2015-07-23 | — | — | US | disclosed |
| EP-2879144-A1 | ELECTRICITY STORAGE DEVICE | Adeka Corporation (JP) | 2015-06-03 | — | — | EP | disclosed |
| US-9023536-B2 | Non-aqueous electrolyte secondary battery | ADEKA CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-9017866-B2 | Non-aqueous electrolyte secondary battery | ADEKA CORPORATION (JP) | 2015-04-28 | — | — | US | disclosed |
| US-20130323605-A1 | NONAQUEOUS ELECTROLYTE SOLUTION FOR BATTERIES, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING SAME | ADEKA CORPORATION (JP) | 2013-12-05 | — | — | US | disclosed |
| EP-2642580-A1 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY | Adeka Corporation (JP) | 2013-09-25 | — | — | EP | disclosed |
| EP-2642579-A1 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY | Adeka Corporation (JP) | 2013-09-25 | — | — | EP | disclosed |
| US-20130236777-A1 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY | ADEKA CORPORATION (JP) | 2013-09-12 | — | — | US | disclosed |
| US-20130177822-A1 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY | ADEKA CORPORATION (JP) | 2013-07-11 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |