SCHEMBL708022

SCHEMBL708022

CC[Si](F)(CC)CCC[Si](F)(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702979 0.93
SCHEMBL15091666 0.90
SCHEMBL15091564 0.90
SCHEMBL15091915 0.90
SCHEMBL15091804 0.90
SCHEMBL20970132 0.87 TSHR (0.35)
SCHEMBL703522 0.85
SCHEMBL23701281 0.82 ALDH1A1 (0.38)
SCHEMBL15091525 0.82
SCHEMBL20970122 0.80 TSHR (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2779299-B1 NONAQUEOUS ELECTROLYTE SOLUTION, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING SAID ELECTROLYTE SOLUTION ADEKA CORP (JP) 2017-08-02 EP disclosed
US-9419306-B2 Nonaqueous electrolyte and nonaqueous secondary battery using same ADEKA CORPORATION (JP) 2016-08-16 US disclosed
US-20160190644-A1 RECHARGEABLE LITHIUM BATTERY SAMSUNG SDI CO., LTD. (KR) 2016-06-30 US disclosed
EP-3038194-A1 RECHARGEABLE LITHIUM BATTERY Samsung SDI Co., Ltd. (KR) 2016-06-29 EP disclosed
EP-2779299-A1 NONAQUEOUS ELECTROLYTE SOLUTION, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING SAID ELECTROLYTE SOLUTION Adeka Corporation (JP) 2014-09-17 EP disclosed
US-20140242456-A1 NONAQUEOUS ELECTROLYTE AND NONAQUEOUS SECONDARY BATTERY USING SAME ADEKA CORPORATION (JP) 2014-08-28 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed