SCHEMBL703254

SCHEMBL703254

c1ccc(CC(O[SiH2]CCCC[SiH2]OC(Cc2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A2 P23975 4/20 0.38
SLC6A4 P31645 3/20 0.38
SLC6A3 Q01959 3/20 0.38
EPHX1 P07099 2/20 0.36
ANPEP P15144 1/20 0.36
SIGMAR1 Q99720 2/20 0.36
ACP3 P15309 1/20 0.36
TAAR1 Q96RJ0 2/20 0.34
MAOA P21397 1/20 0.34
CYP2A6 P11509 1/20 0.34
ADORA2A P29274 1/20 0.34
ADORA1 P30542 1/20 0.34
CYP1A2 P05177 2/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
TSHR P16473 1/20 0.34
CYP2C19 P33261 1/20 0.34
CPA3 P15088 1/20 0.33
ADRB2 P07550 1/20 0.33
ADRB1 P08588 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704181 0.96 SLC6A2 (0.38) SLC6A2SLC6A4SLC6A3EPHX1ANPEP
SCHEMBL704840 0.93 SLC6A2 (0.40) SLC6A2SLC6A4SLC6A3EPHX1ANPEP
SCHEMBL29066961 0.86 SIGMAR1 (0.38) SLC6A2SLC6A4SLC6A3SIGMAR1TAAR1
SCHEMBL705910 0.85 SLC6A2 (0.40) SLC6A2SLC6A4SLC6A3EPHX1ANPEP
SCHEMBL704099 0.83 IDO1 (0.42) SLC6A2SLC6A4SLC6A3SIGMAR1ACP3
SCHEMBL29066974 0.82 SIGMAR1 (0.40) SLC6A2SLC6A4SLC6A3EPHX1ANPEP
SCHEMBL707443 0.81 KCNH2 (0.41) SLC6A2SLC6A4SLC6A3SIGMAR1CYP1A2
SCHEMBL707298 0.79 IDO1 (0.42) SLC6A2SLC6A4SLC6A3SIGMAR1ACP3
SCHEMBL28645395 0.79 MEN1 (0.41) SIGMAR1TSHRDRD2HTR2A
SCHEMBL706315 0.78 KCNH2 (0.41) SLC6A2SLC6A4SLC6A3SIGMAR1CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed