SCHEMBL704099

SCHEMBL704099

c1ccc(CCC(O[SiH2]CCCC[SiH2]OC(CCc2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 2/20 0.42
TDO2 P48775 2/20 0.42
F2 P00734 1/20 0.40
PRSS1 P07477 1/20 0.40
KCNH2 Q12809 3/20 0.39
ACP3 P15309 1/20 0.39
SIGMAR1 Q99720 3/20 0.38
SLC6A4 P31645 3/20 0.36
SLC6A2 P23975 2/20 0.36
SLC6A3 Q01959 2/20 0.36
CYP3A4 P08684 1/20 0.36
CYP2D6 P10635 1/20 0.36
CNR2 P34972 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707298 0.97 IDO1 (0.42) IDO1TDO2F2PRSS1KCNH2
SCHEMBL704047 0.93 IDO1 (0.44) IDO1TDO2F2PRSS1KCNH2
SCHEMBL707443 0.92 KCNH2 (0.41) IDO1TDO2KCNH2SIGMAR1SLC6A4
SCHEMBL706315 0.89 KCNH2 (0.41) IDO1TDO2KCNH2SIGMAR1SLC6A4
SCHEMBL704017 0.87 KCNH2 (0.42) IDO1KCNH2SIGMAR1SLC6A4SLC6A2
SCHEMBL706838 0.86 IDO1 (0.44) IDO1TDO2F2PRSS1KCNH2
SCHEMBL703254 0.83 SLC6A2 (0.38) KCNH2ACP3SIGMAR1SLC6A4SLC6A2
SCHEMBL706464 0.80 KCNH2 (0.42) IDO1TDO2KCNH2SIGMAR1SLC6A4
SCHEMBL704181 0.79 SLC6A2 (0.38) KCNH2ACP3SIGMAR1SLC6A4SLC6A2
SCHEMBL703767 0.79 IDO1 (0.44) IDO1TDO2F2PRSS1KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed