SCHEMBL703460

SCHEMBL703460

CCCC[Si](CC[Si](CCCC)(OC)OC)(OC)OC

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.35
TSHR P16473 3/20 0.33
THRB P10828 1/20 0.32
DNM1 Q05193 4/20 0.30
EPHX1 P07099 2/20 0.30
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL109247 0.97 LMNA (0.37) LMNATSHRTHRBDNM1EPHX1
SCHEMBL705772 0.94 LMNA (0.35) LMNATSHRTHRBDNM1EPHX1
SCHEMBL705913 0.94 LMNA (0.35) LMNATSHRTHRBDNM1EPHX1
Ammonia Solution, Strong SCHEMBL27832266 0.94 LMNA (0.35) LMNATSHRTHRBDNM1EPHX1
SCHEMBL3243113 0.92 LMNA (0.39) LMNATSHRTHRBDNM1EPHX1
SCHEMBL3236523 0.92 LMNA (0.39) LMNATSHRTHRBDNM1EPHX1
SCHEMBL3242411 0.92 LMNA (0.39) LMNATSHRTHRBDNM1EPHX1
SCHEMBL3243154 0.92 LMNA (0.39) LMNATSHRTHRBDNM1EPHX1
SCHEMBL525579 0.92 LMNA (0.34) LMNATSHRTHRB
SCHEMBL27430075 0.92 LMNA (0.34) LMNATSHRTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
EP-2163664-A1 Method for depositing si-containing film, insulator film, and semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-03-17 EP disclosed
US-20100061915-A1 METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed