SCHEMBL703797

SCHEMBL703797

CCCC[Si](C[Si](CCCC)(OC)OC)(OC)OC

nearest known ligand 0.34

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.34
TSHR P16473 2/20 0.32
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31042503 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL31042504 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL109247 0.88 LMNA (0.37) LMNATSHRTHRB
SCHEMBL3680176 0.87 LMNA (0.31) LMNA
SCHEMBL703460 0.86 LMNA (0.35) LMNATSHRTHRB
Ammonia Solution, Strong SCHEMBL27832266 0.86 LMNA (0.35) LMNATSHRTHRB
SCHEMBL705913 0.86 LMNA (0.35) LMNATSHRTHRB
SCHEMBL705772 0.86 LMNA (0.35) LMNATSHRTHRB
SCHEMBL23040429 0.83 LMNA (0.34) LMNATSHRTHRB
SCHEMBL3236523 0.83 LMNA (0.39) LMNATSHRTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed