SCHEMBL704017

SCHEMBL704017

c1ccc(CCCC(O[SiH2]CC[SiH2]OC(CCCc2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 2/20 0.42
MAOB P27338 2/20 0.39
HTR2A P28223 1/20 0.39
SIGMAR1 Q99720 4/20 0.38
IDO1 P14902 1/20 0.38
TP53 P04637 1/20 0.37
CYP1A2 P05177 1/20 0.37
CYP2D6 P10635 1/20 0.37
MAPT P10636 1/20 0.37
CYP2C9 P11712 1/20 0.37
ALOX15 P16050 1/20 0.37
TSHR P16473 1/20 0.37
NFKB1 P19838 1/20 0.37
SLC6A2 P23975 1/20 0.37
MAPK1 P28482 1/20 0.37
SLC6A4 P31645 1/20 0.37
CYP2C19 P33261 1/20 0.37
THPO P40225 1/20 0.37
MTOR P42345 1/20 0.37
RAB9A P51151 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707443 0.95 KCNH2 (0.41) KCNH2SIGMAR1IDO1TP53CYP1A2
SCHEMBL706315 0.95 KCNH2 (0.41) KCNH2SIGMAR1IDO1TP53CYP1A2
SCHEMBL706464 0.90 KCNH2 (0.42) KCNH2SIGMAR1IDO1TP53CYP1A2
SCHEMBL704047 0.90 IDO1 (0.44) KCNH2MAOBHTR2ASIGMAR1IDO1
SCHEMBL704099 0.87 IDO1 (0.42) KCNH2SIGMAR1IDO1CYP2D6SLC6A2
SCHEMBL707298 0.87 IDO1 (0.42) KCNH2SIGMAR1IDO1CYP2D6SLC6A2
SCHEMBL708047 0.83 KCNH2 (0.42) KCNH2SIGMAR1IDO1TP53CYP1A2
SCHEMBL706838 0.79 IDO1 (0.44) KCNH2SIGMAR1IDO1CYP2D6SLC6A2
SCHEMBL704840 0.79 SLC6A2 (0.40) KCNH2HTR2ASIGMAR1CYP1A2CYP2D6
SCHEMBL6330057 0.77 KCNH2 (0.46) KCNH2SIGMAR1IDO1SLC6A2SLC6A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed