SCHEMBL706838

SCHEMBL706838

c1ccc(CCC(O[SiH2]C[SiH2]OC(CCc2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 2/20 0.44
TDO2 P48775 2/20 0.44
F2 P00734 1/20 0.42
PRSS1 P07477 1/20 0.42
ACP3 P15309 1/20 0.41
KCNH2 Q12809 3/20 0.40
CYP19A1 P11511 2/20 0.38
SLC6A4 P31645 3/20 0.37
SLC6A2 P23975 2/20 0.37
SLC6A3 Q01959 2/20 0.37
CYP3A4 P08684 1/20 0.37
CYP2D6 P10635 1/20 0.37
CNR2 P34972 1/20 0.37
SIGMAR1 Q99720 1/20 0.37
PPARG P37231 1/20 0.36
PPARA Q07869 1/20 0.36
ANPEP P15144 1/20 0.35
ERAP1 Q9NZ08 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706464 0.90 KCNH2 (0.42) IDO1TDO2KCNH2SLC6A4SLC6A2
SCHEMBL704047 0.89 IDO1 (0.44) IDO1TDO2F2PRSS1ACP3
SCHEMBL704099 0.86 IDO1 (0.42) IDO1TDO2F2PRSS1ACP3
SCHEMBL707298 0.86 IDO1 (0.42) IDO1TDO2F2PRSS1ACP3
SCHEMBL703767 0.82 IDO1 (0.44) IDO1TDO2F2PRSS1ACP3
SCHEMBL705910 0.81 SLC6A2 (0.40) ACP3KCNH2CYP19A1SLC6A4SLC6A2
SCHEMBL704017 0.79 KCNH2 (0.42) IDO1KCNH2SLC6A4SLC6A2SLC6A3
SCHEMBL28902075 0.79 IDO1 (0.50) IDO1TDO2F2PRSS1ACP3
SCHEMBL706315 0.78 KCNH2 (0.41) IDO1TDO2KCNH2SLC6A4SLC6A2
SCHEMBL707443 0.78 KCNH2 (0.41) IDO1TDO2KCNH2SLC6A4SLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed