SCHEMBL704072

SCHEMBL704072

Cc1ccc([S+](C)C)c2ccccc12

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 6/20 0.62
CYP2A6 P11509 4/20 0.48
ALDH1A1 P00352 3/20 0.41
TSHR P16473 4/20 0.38
MAPT P10636 4/20 0.35
KDM4E B2RXH2 2/20 0.35
ACHE P22303 1/20 0.35
SMN1; SMN2 Q16637 2/20 0.33
GRIN2D O15399 1/20 0.33
GRIN3B O60391 1/20 0.33
GRIN1 Q05586 1/20 0.33
GRIN2A Q12879 1/20 0.33
GRIN2B Q13224 1/20 0.33
GRIN2C Q14957 1/20 0.33
GRIN3A Q8TCU5 1/20 0.33
PABPC1 P11940 1/20 0.33
HPGD P15428 2/20 0.32
HSD17B10 Q99714 2/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL645278 0.81 CYP1A2 (0.41) CYP1A2CYP2A6MAPTKDM4EACHE
SCHEMBL29447796 0.79 CYP1A2 (1.00) CYP1A2CYP2A6ALDH1A1TSHRMAPT
SCHEMBL29363045 0.79 CYP1A2 (1.00) CYP1A2CYP2A6ALDH1A1TSHRMAPT
SCHEMBL161370 0.79 CYP1A2 (1.00) CYP1A2CYP2A6ALDH1A1TSHRMAPT
SCHEMBL701579 0.76 CYP1A2 (0.54) CYP1A2CYP2A6ALDH1A1TSHRMAPT
SCHEMBL29420748 0.74 IDO1 (0.59) CYP1A2TSHRMAPTHPGDHSD17B10
SCHEMBL132348 0.74 IDO1 (0.59) CYP1A2TSHRMAPTHPGDHSD17B10
Hydrochloric Acid SCHEMBL4410534 0.73 IDO1 (0.56) CYP1A2TSHRMAPTHPGDHSD17B10
SCHEMBL12770110 0.71 MAPT (0.42) CYP1A2CYP2A6ALDH1A1TSHRMAPT
SCHEMBL21929971 0.71 CYP1A2 (0.81) CYP1A2CYP2A6ALDH1A1TSHRMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023157801-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE JSR株式会社 2023-08-24 WO disclosed
US-10423083-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2019-09-24 US disclosed
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
US-20170176878-A1 CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE JSR CORPORATION (JP) 2017-06-22 US disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9259668-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2016-02-16 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-20140363773-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-12-11 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7108955-B2 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-19 US disclosed
EP-1045290-B1 Composition for resist underlayer film and method for producing the same JSR CORP (JP) 2006-03-15 EP disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed