Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL645278

Cc1ccc([S+](C)C)c2ccccc12.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.41

Full drug profile on Sugi Atlas →

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 2/20 0.41
GPR3 P46089 2/20 0.39
KCNH2 Q12809 8/20 0.34
NSD2 O96028 2/20 0.34
NR2F2 P24468 1/20 0.34
CYP2A6 P11509 1/20 0.32
ACHE P22303 4/20 0.32
KDM4E B2RXH2 1/20 0.31
MAPT P10636 1/20 0.31
PABPC1 P11940 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
GALR3 O60755 1/20 0.31
RAD52 P43351 1/20 0.31
HSP90AA1 P07900 1/20 0.30
CFTR P13569 1/20 0.30
NQO2 P16083 1/20 0.30
GOPC Q9HD26 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3120425 0.86 CYP1A2 (0.34) CYP1A2
SCHEMBL3122212 0.85 CYP1A2 (0.33) CYP1A2
Trifluoromethanesulfonic Acid SCHEMBL648392 0.84 CYP1A2 (0.37) CYP1A2GPR3KCNH2NSD2NR2F2
Trifluoromethanesulfonic Acid SCHEMBL31168271 0.83 LDHA (0.44) GPR3MAPTSMN1; SMN2
Trifluoromethanesulfonic Acid SCHEMBL36124 0.83 LDHA (0.44) GPR3MAPTSMN1; SMN2
SCHEMBL704072 0.81 CYP1A2 (0.62) CYP1A2CYP2A6ACHEKDM4EMAPT
Trifluoromethanesulfonic Acid SCHEMBL562052 0.80 GPR3 (0.43) GPR3KCNH2ACHE
Trifluoromethanesulfonic Acid SCHEMBL646668 0.80 CTSB (0.43) GPR3MAPTSMN1; SMN2
Trifluoromethanesulfonic Acid SCHEMBL644198 0.80 SLC22A12 (0.42) GPR3
Trifluoromethanesulfonic Acid SCHEMBL31168285 0.79 GPR3 (0.40) CYP1A2GPR3KCNH2ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 107 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9170492-B2 Silicon-containing film-forming composition, silicon-containing film, and pattern forming method JSR CORPORATION (JP) 2015-10-27 US disclosed
US-9140985-B2 2015-09-22 US disclosed
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 US disclosed
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
US-8722306-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-05-13 US disclosed
US-8691496-B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film JSR CORPORATION (JP) 2014-04-08 US disclosed
US-8663905-B2 Pattern-forming method JSR CORPORATION (JP) 2014-03-04 US disclosed
US-20140048512-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-02-20 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
US-20010014427-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 2001-08-16 US disclosed
US-6242161-B1 ABSORPTION COATINGS USING COPOLYMERS JSR CORPORATION (JP) 2001-06-05 US disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
US-6187504-B1 PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION JSR CORPORATION (JP) 2001-02-13 US disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1048983-A1 Radiation sensitive resin composition JSR Corporation (JP) 2000-11-02 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed
EP-0849634-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-06-24 EP disclosed