SCHEMBL704137

SCHEMBL704137

CCC[Si](CCC)(CC[Si](CCC)(CCC)OC(C)=O)OC(C)=O

nearest known ligand 0.36

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.36
LMNA P02545 1/20 0.36
HSD17B10 Q99714 1/20 0.36
PAOX Q6QHF9 1/20 0.31
FAAH O00519 1/20 0.31
TSHR P16473 2/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL476034 0.97 ALDH1A1 (0.38) ALDH1A1LMNAHSD17B10PAOXFAAH
SCHEMBL702862 0.91 ALDH1A1 (0.38) ALDH1A1LMNAHSD17B10PAOXFAAH
SCHEMBL704951 0.91 ALDH1A1 (0.38) ALDH1A1LMNAHSD17B10PAOXFAAH
SCHEMBL707205 0.88 ALDH1A1 (0.35) ALDH1A1LMNAHSD17B10PAOX
SCHEMBL707669 0.86 ALDH1A1 (0.43) ALDH1A1LMNAHSD17B10PAOXFAAH
SCHEMBL475932 0.83 ALDH1A1 (0.44) ALDH1A1LMNAHSD17B10PAOXFAAH
SCHEMBL707081 0.82 ALDH1A1 (0.38) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL706148 0.81 ALDH1A1 (0.43) ALDH1A1LMNAHSD17B10PAOXFAAH
SCHEMBL475990 0.81 ALDH1A1 (0.43) ALDH1A1HSD17B10FAAHTSHRTDP1
SCHEMBL704795 0.81 ALDH1A1 (0.43) ALDH1A1LMNAHSD17B10PAOXFAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed