SCHEMBL704153

SCHEMBL704153

CCC[Si](C[Si](CCC)(Oc1ccccc1)Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.38
CA4 P22748 1/20 0.36
RECQL P46063 1/20 0.35
CHRNB2 P17787 2/20 0.33
CHRNB4 P30926 2/20 0.33
CHRNA3 P32297 2/20 0.33
CHRNA7 P36544 2/20 0.33
CHRNA4 P43681 2/20 0.33
L3MBTL1 Q9Y468 2/20 0.33
TSHR P16473 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
KCNA3 P22001 1/20 0.33
MAPT P10636 2/20 0.33
ALOX12 P18054 1/20 0.33
CYP1A2 P05177 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL427597 0.91 LTA4H (0.41) LTA4HCA4RECQLCHRNB2CHRNB4
SCHEMBL705984 0.89 LTA4H (0.39) LTA4HCA4RECQLCHRNB2CHRNB4
SCHEMBL28448620 0.88 LTA4H (0.38) LTA4HCA4RECQLCHRNB2CHRNB4
SCHEMBL705260 0.86 LTA4H (0.41) LTA4HCA4RECQLTSHRSMN1; SMN2
SCHEMBL19816467 0.86 CA4 (0.39) LTA4HCA4RECQLCHRNB2CHRNB4
SCHEMBL702538 0.86 LTA4H (0.41) LTA4HCA4RECQLTSHRSMN1; SMN2
SCHEMBL28449543 0.84 LTA4H (0.44) LTA4HRECQLTSHRSMN1; SMN2KCNA3
SCHEMBL10627368 0.84 LTA4H (0.38) LTA4HCA4CHRNB2CHRNB4CHRNA3
SCHEMBL705199 0.83 LTA4H (0.39) LTA4HCA4RECQLCHRNB2CHRNB4
SCHEMBL29415953 0.82 TP53 (0.37) LTA4HCA4TSHRSMN1; SMN2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed