SCHEMBL704189

SCHEMBL704189

CC(C)(C)CO[SiH](c1ccccc1)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.33
RIPK1 Q13546 3/20 0.32
POLB P06746 1/20 0.32
TAAR1 Q96RJ0 2/20 0.31
ALDH1A1 P00352 1/20 0.31
ALOX15 P16050 1/20 0.31
SLC6A2 P23975 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708400 0.79 RIPK1 (0.37) MAPK1RIPK1POLB
SCHEMBL432653 0.79 MAPK1 (0.31) MAPK1RIPK1POLB
SCHEMBL2140224 0.79 ALDH1A1 (0.33) MAPK1RIPK1POLBALDH1A1ALOX15
SCHEMBL7023755 0.79 MAPK1 (0.31) MAPK1RIPK1POLB
SCHEMBL1203380 0.79 MAPK1 (0.31) MAPK1RIPK1POLB
SCHEMBL2140219 0.79 POLB (0.37) MAPK1RIPK1POLBALDH1A1
SCHEMBL25327199 0.79 CFTR (0.31)
SCHEMBL17511800 0.77
SCHEMBL706844 0.76 RIPK1 (0.35) RIPK1
SCHEMBL28724013 0.75 MIF (0.31) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-5192732-A PROPYLENE POLYMERIZATION COCATALYST CONTAINING SILANE AND RESULTANT CATALYSTS ATOCHEM (FR) 1993-03-09 US disclosed
EP-0491584-A2 Propylene polymerization cocatalyst based on silane and monoether Société APPRYL (FR) 1992-06-24 EP disclosed
US-4771134-A Ring-opening process for preparing azetidinone intermediates FARMITALIA CARLO ERBA S.P.A. (IT) 1988-09-13 US disclosed