SCHEMBL704239

SCHEMBL704239

CCCCOC(CC[SiH2]C[SiH2]CCC(OCCCC)OCCCC)OCCCC

nearest known ligand 0.31

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 1/20 0.31
ADRB2 P07550 1/20 0.31
ADRB1 P08588 1/20 0.31
ADRB3 P13945 1/20 0.31
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705756 0.90 DNM1 (0.31) DNM1ADRB2ADRB1ADRB3
SCHEMBL707191 0.89 DNM1 (0.32) DNM1ADRB2ADRB1ADRB3CA1
SCHEMBL705191 0.88 CYP3A4 (0.32) DNM1ADRB2ADRB1ADRB3CA1
SCHEMBL701957 0.88 CYP3A4 (0.32) DNM1ADRB2ADRB1ADRB3CA1
SCHEMBL704759 0.87 TDP1 (0.32)
SCHEMBL351162 0.82 ADRB2 (0.39) DNM1ADRB2ADRB1ADRB3CA1
SCHEMBL28665896 0.80 ADRB2 (0.38) DNM1ADRB2ADRB1ADRB3CA1
SCHEMBL703847 0.79 DNM1 (0.31) DNM1ADRB2ADRB1ADRB3CA1
SCHEMBL702359 0.79
SCHEMBL703929 0.79 DNM1 (0.31) DNM1ADRB2ADRB1ADRB3CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed