SCHEMBL704254

SCHEMBL704254

CC(C)(C)CCCCO[SiH3]

nearest known ligand 0.35

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6331157 0.97 HRH3 (0.34) HRH3
SCHEMBL27646927 0.97 HRH3 (0.34) HRH3
SCHEMBL704052 0.94
SCHEMBL8665463 0.90 HRH3 (0.42) HRH3
SCHEMBL8667497 0.85 HRH3 (0.40) HRH3
SCHEMBL8665138 0.83 HRH3 (0.41) HRH3
SCHEMBL706505 0.81
SCHEMBL8670146 0.79 HRH3 (0.40) HRH3
SCHEMBL8462300 0.79 HRH3 (0.48) HRH3
SCHEMBL8665402 0.78 HRH3 (0.38) HRH3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100354319-C Hydrogenation catalyst composition and method for hydrogenating conjugate diene polymer TAIWAN RUBBER CO LTD (CN) 2007-12-12 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1781955-A Hydrogenation catalyst composition and method for hydrogenating conjugate diene polymer TAIWAN RUBBER CO LTD (CN) 2006-06-07 CN disclosed