SCHEMBL704663

SCHEMBL704663

CCCCC(CCCC)C(=O)O[SiH2]c1ccc([SiH2]OC(=O)C(CCCC)CCCC)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 8/20 0.44
CA1 P00915 4/20 0.44
MAPK1 P28482 2/20 0.40
GAA P10253 1/20 0.39
XBP1 P17861 1/20 0.39
ATM Q13315 1/20 0.39
NPSR1 Q6W5P4 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
ALDH1A1 P00352 2/20 0.39
CYP3A4 P08684 1/20 0.39
PRSS1 P07477 1/20 0.37
CTSG P08311 1/20 0.37
CTRB1 P17538 1/20 0.37
CMA1 P23946 1/20 0.37
MEN1 O00255 1/20 0.36
MAPT P10636 1/20 0.36
KMT2A Q03164 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
TSHR P16473 2/20 0.36
LMNA P02545 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705845 0.89 CA1 (0.42) CA2CA1NPSR1CYP3A4SMN1; SMN2
SCHEMBL703865 0.74 CA2 (0.50) CA2CA1MAPK1GAAXBP1
SCHEMBL707670 0.74 CA2 (0.50) CA2CA1MAPK1ATMNPSR1
SCHEMBL704796 0.73 CA2 (0.48) CA2CA1MAPK1ATMNPSR1
SCHEMBL706149 0.73 CA2 (0.48) CA2CA1MAPK1ATMNPSR1
SCHEMBL29071065 0.71 CA2 (0.59) CA2CA1MAPK1ATMALDH1A1
SCHEMBL2289616 0.69 ATM (0.51) CA2CA1MAPK1GAAXBP1
SCHEMBL8463037 0.69 CA2 (0.57) CA2CA1MAPK1ATMALDH1A1
SCHEMBL5491480 0.69 CA2 (0.57) CA2CA1MAPK1ATMALDH1A1
SCHEMBL8950290 0.69 CA2 (0.83) CA2CA1MAPK1ATMCYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed