SCHEMBL705845

SCHEMBL705845

CCCC(CCC)C(=O)O[SiH2]c1ccc([SiH2]OC(=O)C(CCC)CCC)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 4/20 0.42
CA2 P00918 4/20 0.42
HDAC1 Q13547 4/20 0.39
HDAC2 Q92769 3/20 0.39
CHRM1 P11229 2/20 0.39
CHRM3 P20309 2/20 0.39
ADRA1A P35348 2/20 0.39
AKR1A1 P14550 1/20 0.39
HTR2A P28223 1/20 0.39
HTR2C P28335 1/20 0.39
HRH1 P35367 1/20 0.39
DRD3 P35462 1/20 0.39
SLC6A3 Q01959 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
HDAC7 Q8WUI4 3/20 0.38
HDAC8 Q9BY41 3/20 0.38
HDAC6 Q9UBN7 3/20 0.38
HDAC9 Q9UKV0 3/20 0.38
HDAC5 Q9UQL6 3/20 0.38
HDAC3 O15379 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704663 0.89 CA2 (0.44) CA1CA2CYP3A4TSHRNPSR1
SCHEMBL705216 0.85 RAB9A (0.36) CA1CA2CYP3A4TSHRNPSR1
SCHEMBL704138 0.74 HDAC1 (0.46) CA1CA2HDAC1HDAC2CHRM1
SCHEMBL707206 0.72 HDAC1 (0.44) CA1CA2HDAC1HDAC2CHRM1
SCHEMBL702863 0.71 HDAC1 (0.43) CA1CA2HDAC1HDAC2CHRM1
SCHEMBL705707 0.71
SCHEMBL704952 0.71 HDAC1 (0.43) CA1CA2HDAC1HDAC2CHRM1
SCHEMBL9071224 0.69 HDAC1 (0.50) CA1CA2HDAC1HDAC2CHRM1
SCHEMBL358441 0.68 HDAC1 (0.55) CA1CA2HDAC1HDAC2CHRM1
SCHEMBL10339951 0.68 HDAC1 (0.55) CA1CA2HDAC1HDAC2CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed