Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LTA4H | P09960 | 4/20 | 0.37 |
| ▸ | CA4 | P22748 | 1/20 | 0.34 |
| ▸ | CHRNB2 | P17787 | 2/20 | 0.32 |
| ▸ | CHRNB4 | P30926 | 2/20 | 0.32 |
| ▸ | CHRNA3 | P32297 | 2/20 | 0.32 |
| ▸ | CHRNA7 | P36544 | 2/20 | 0.32 |
| ▸ | CHRNA4 | P43681 | 2/20 | 0.32 |
| ▸ | KCNA3 | P22001 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.32 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.32 |
| ▸ | RECQL | P46063 | 1/20 | 0.31 |
| ▸ | MLNR | O43193 | 1/20 | 0.31 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.31 |
| ▸ | ESR1 | P03372 | 1/20 | 0.31 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.31 |
| ▸ | PGR | P06401 | 1/20 | 0.31 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.31 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL707990 | 0.96 | LTA4H (0.37) | LTA4HCA4CHRNB2CHRNB4CHRNA3 | |
| SCHEMBL706246 | 0.89 | LTA4H (0.43) | LTA4HKCNA3TSHRMAPTRECQL | |
| SCHEMBL705116 | 0.87 | LTA4H (0.38) | LTA4HCA4KCNA3TSHRMAPT | |
| SCHEMBL707307 | 0.83 | KCNA3 (0.39) | LTA4HCA4KCNA3TSHRL3MBTL1 | |
| SCHEMBL702283 | 0.83 | KCNA3 (0.39) | LTA4HCA4KCNA3TSHRL3MBTL1 | |
| SCHEMBL704611 | 0.83 | LTA4H (0.38) | LTA4HCA4CHRNB2CHRNB4CHRNA3 | |
| SCHEMBL705338 | 0.82 | LTA4H (0.38) | LTA4HCA4CHRNB2CHRNB4CHRNA3 | |
| SCHEMBL707309 | 0.80 | LTA4H (0.37) | LTA4HCA4CHRNB2CHRNB4CHRNA3 | |
| SCHEMBL703808 | 0.79 | LTA4H (0.38) | LTA4HCA4CHRNB2CHRNB4CHRNA3 | |
| SCHEMBL705763 | 0.79 | TP53 (0.32) | LTA4HCA4ESR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116075368-A | Resin composition, cured product, method for producing same, and laminate | 三菱化学株式会社 | 2023-05-05 | — | — | CN | disclosed |
| CN-110249004-B | Polyimide precursor composition | 东京应化工业株式会社 | 2022-07-19 | — | — | CN | disclosed |
| CN-108389512-B | Laminate, flexible device, and method for producing laminate | 东京应化工业株式会社 | 2022-04-15 | — | — | CN | disclosed |
| WO-2022054912-A1 | RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE | 三菱ケミカル株式会社 | 2022-03-17 | — | — | WO | disclosed |
| CN-108250754-B | Silicon-containing resin composition, silicon-containing resin film, silica film, light-emitting display element panel, and light-emitting display device | 东京应化工业株式会社 | 2022-01-25 | — | — | CN | disclosed |
| US-9546237-B2 | Stabilization of polymers that contain a hydrolyzable functionality | BRIDGESTONE CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| US-20130331520-A1 | STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY | BRIDGESTONE CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |