SCHEMBL707307

SCHEMBL707307

c1ccc(O[Si](CCC[Si](Oc2ccccc2)(Oc2ccccc2)c2ccccc2)(Oc2ccccc2)c2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.39
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
HDAC3 O15379 1/20 0.32
HDAC4 P56524 1/20 0.32
HDAC1 Q13547 1/20 0.32
HDAC7 Q8WUI4 1/20 0.32
HDAC2 Q92769 1/20 0.32
HDAC10 Q969S8 1/20 0.32
HDAC11 Q96DB2 1/20 0.32
HDAC8 Q9BY41 1/20 0.32
HDAC6 Q9UBN7 1/20 0.32
HDAC9 Q9UKV0 1/20 0.32
HDAC5 Q9UQL6 1/20 0.32
KCNH2 Q12809 1/20 0.32
DRD2 P14416 1/20 0.32
DRD4 P21917 1/20 0.32
DRD3 P35462 1/20 0.32
CA4 P22748 1/20 0.32
HTR1B P28222 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702283 0.96 KCNA3 (0.39) KCNA3LTA4HTSHRHDAC3HDAC4
SCHEMBL705116 0.91 LTA4H (0.38) KCNA3LTA4HTSHRHDAC3HDAC4
SCHEMBL706246 0.88 LTA4H (0.43) KCNA3LTA4HTSHRKCNH2DRD2
SCHEMBL704669 0.83 LTA4H (0.37) KCNA3LTA4HTSHRKCNH2DRD2
SCHEMBL704165 0.82 LTA4H (0.38) KCNA3LTA4HTSHRKCNH2CA4
SCHEMBL706483 0.80 KCNA3 (0.41) KCNA3LTA4HTSHRHDAC3HDAC4
SCHEMBL707990 0.79 LTA4H (0.37) KCNA3LTA4HTSHRKCNH2DRD2
SCHEMBL704611 0.78 LTA4H (0.38) KCNA3LTA4HTSHRKCNH2CA4
SCHEMBL705435 0.76 KCNA3 (0.41) KCNA3LTA4HTSHRHDAC3HDAC4
SCHEMBL647734 0.76 CA4 (0.33) KCNA3LTA4HCA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed