SCHEMBL704687

SCHEMBL704687

CCCCc1ccccc1[SiH2]F

nearest known ligand 0.44

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.44
CYP2D6 P10635 1/20 0.44
CYP2C9 P11712 1/20 0.44
LIPG Q9Y5X9 1/20 0.43
TLR8 Q9NR97 1/20 0.38
POLB P06746 1/20 0.37
TYR P14679 1/20 0.36
NR1H2 P55055 1/20 0.36
NR1H3 Q13133 1/20 0.36
SIGMAR1 Q99720 1/20 0.35
ALOX5 P09917 1/20 0.35
PTGS2 P35354 1/20 0.35
HTR1A P08908 1/20 0.34
BID P55957 1/20 0.33
BCL2L1 Q07817 1/20 0.33
MCL1 Q07820 1/20 0.33
BAK1 Q16611 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704108 0.83 CYP3A4 (0.37) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL704629 0.80 LIPG (0.43) CYP3A4CYP2D6CYP2C9LIPGTLR8
SCHEMBL3482049 0.80 CYP3A4 (0.47) CYP3A4CYP2D6CYP2C9LIPGTLR8
SCHEMBL713126 0.80 LIPG (0.43) CYP3A4CYP2D6CYP2C9LIPGTLR8
SCHEMBL245188 0.78 LIPG (0.56) CYP3A4CYP2D6CYP2C9LIPGTLR8
SCHEMBL29520482 0.78 LIPG (0.56) CYP3A4CYP2D6CYP2C9LIPGTLR8
SCHEMBL27887329 0.77 LIPG (0.41) CYP3A4CYP2D6CYP2C9LIPGTLR8
SCHEMBL27614154 0.77 LIPG (0.41) CYP3A4CYP2D6CYP2C9LIPGTLR8
SCHEMBL6125428 0.76 LIPG (0.40) CYP3A4CYP2D6CYP2C9LIPGTLR8
Benzene SCHEMBL3118223 0.75 LIPG (0.54) CYP3A4CYP2D6CYP2C9LIPGTLR8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed