SCHEMBL3482049

SCHEMBL3482049

CCCCc1ccccc1[SiH2]O

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.47
CYP2D6 P10635 1/20 0.47
CYP2C9 P11712 1/20 0.47
LIPG Q9Y5X9 1/20 0.47
TYR P14679 1/20 0.40
NR1H2 P55055 1/20 0.39
NR1H3 Q13133 1/20 0.39
ALOX5 P09917 1/20 0.39
PTGS2 P35354 1/20 0.39
HTR1A P08908 1/20 0.38
TLR8 Q9NR97 1/20 0.38
BID P55957 3/20 0.37
MCL1 Q07820 3/20 0.37
BCL2L1 Q07817 2/20 0.37
BAK1 Q16611 2/20 0.37
KAT8 Q9H7Z6 2/20 0.37
PPARG P37231 1/20 0.37
PPARA Q07869 1/20 0.37
EP300 Q09472 1/20 0.37
KAT2A Q92830 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481701 0.94 LIPG (0.55) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL1918471 0.88 HTR1A (0.40) CYP3A4CYP2D6CYP2C9LIPGHTR1A
SCHEMBL2524117 0.83 CYP3A4 (0.41) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL3482554 0.83 CYP3A4 (0.41) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL2518240 0.82 CYP3A4 (0.40) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL713126 0.80 LIPG (0.43) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL704687 0.80 CYP3A4 (0.44) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL704629 0.80 LIPG (0.43) CYP3A4CYP2D6CYP2C9LIPGTYR
SCHEMBL6114437 0.79 GABRA1 (0.46)
SCHEMBL29520482 0.78 LIPG (0.56) CYP3A4CYP2D6CYP2C9LIPGTYR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed