SCHEMBL704690

SCHEMBL704690

CC(C)C(c1ccccc1)(C(C)C)C(C)(C)O[SiH3]

nearest known ligand 0.40

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.40
ALDH1A1 P00352 4/20 0.38
ALOX15 P16050 1/20 0.38
CYP2D6 P10635 2/20 0.36
CYP1A2 P05177 1/20 0.36
TSHR P16473 2/20 0.34
CYP2C19 P33261 2/20 0.34
HIF1A Q16665 1/20 0.34
TAAR1 Q96RJ0 1/20 0.33
RIPK1 Q13546 1/20 0.33
ESR1 P03372 3/20 0.32
ESR2 Q92731 3/20 0.32
CYP3A4 P08684 1/20 0.32
MAPT P10636 1/20 0.31
KMT2A Q03164 1/20 0.31
KCNN4 O15554 4/20 0.31
HSD17B10 Q99714 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705548 0.80 MAPK1 (0.40) MAPK1ALDH1A1ALOX15CYP2D6CYP1A2
SCHEMBL14841767 0.75 MAPK1 (0.43) MAPK1ALDH1A1ALOX15CYP2D6CYP1A2
SCHEMBL6706193 0.74 MAPK1 (0.46) MAPK1ALDH1A1ALOX15TSHRCYP2C19
SCHEMBL705273 0.74 MAPK1 (0.46) MAPK1ALDH1A1ALOX15TSHRCYP2C19
SCHEMBL704059 0.74 MAPK1 (0.46) MAPK1ALDH1A1ALOX15CYP1A2TSHR
SCHEMBL703675 0.72 CYP2D6 (0.39) MAPK1ALDH1A1ALOX15CYP2D6CYP1A2
SCHEMBL704037 0.72 CYP2D6 (0.39) MAPK1ALDH1A1ALOX15CYP2D6CYP1A2
SCHEMBL705720 0.71 MAPK1 (0.43) MAPK1ALDH1A1ALOX15TSHRCYP2C19
SCHEMBL48954 0.69 MAPK1 (0.64) MAPK1ALDH1A1ALOX15TSHRCYP2C19
SCHEMBL675685 0.69 MAPK1 (0.50) MAPK1ALDH1A1ALOX15TSHRCYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed