SCHEMBL704059

SCHEMBL704059

CC(C)(O[SiH3])C(c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.46
ALDH1A1 P00352 3/20 0.43
ALOX15 P16050 1/20 0.43
KCNN4 O15554 4/20 0.41
TAAR1 Q96RJ0 1/20 0.38
ESR1 P03372 2/20 0.37
ESR2 Q92731 2/20 0.37
CYP3A4 P08684 1/20 0.37
MAPT P10636 1/20 0.35
KMT2A Q03164 1/20 0.35
TSHR P16473 2/20 0.35
CYP2C19 P33261 1/20 0.34
HIF1A Q16665 1/20 0.34
CYP1A2 P05177 1/20 0.33
CYP2B6 P20813 1/20 0.33
HDAC3 O15379 1/20 0.33
HDAC4 P56524 1/20 0.33
HDAC1 Q13547 1/20 0.33
HDAC7 Q8WUI4 1/20 0.33
HDAC2 Q92769 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4358877 0.82 MAPK1 (0.48) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL6706193 0.81 MAPK1 (0.46) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL705273 0.81 MAPK1 (0.46) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL8340894 0.80 MAPK1 (0.56) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL705720 0.77 MAPK1 (0.43) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL675685 0.75 MAPK1 (0.50) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL48954 0.75 MAPK1 (0.64) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL4462028 0.74 MAPK1 (0.44) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL6708079 0.74 MAPK1 (0.40) MAPK1ALDH1A1ALOX15KCNN4TAAR1
SCHEMBL704690 0.74 MAPK1 (0.40) MAPK1ALDH1A1ALOX15KCNN4TAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-6787193-B2 DECOMPOSITION OF AN ORGANOSILICON COMPOUND JSR CORPORATION (JP) 2004-09-07 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed