SCHEMBL704704

SCHEMBL704704

CCC[SiH](OC(C)C)OC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13089487 0.84
SCHEMBL702467 0.83 LMNA (0.31)
SCHEMBL27591380 0.81 LMNA (0.34)
SCHEMBL3815234 0.79 TSHR (0.38)
SCHEMBL8451706 0.79 TSHR (0.38)
SCHEMBL20492286 0.79
SCHEMBL5834141 0.78
SCHEMBL3341111 0.78 TSHR (0.34)
SCHEMBL13089491 0.78
SCHEMBL21059188 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120020643-A Pattern forming method 信越化学工业株式会社 2025-05-20 CN disclosed
CN-112526822-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2025-02-28 CN disclosed
CN-112286000-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-12-03 CN disclosed
CN-111856882-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-29 CN disclosed
CN-114594657-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-22 CN disclosed
CN-114660896-B Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2024-06-11 CN disclosed
CN-116804825-A Composition for forming silicon-containing metal hard mask and pattern forming method 信越化学工业株式会社 2023-09-26 CN disclosed
CN-111208710-B Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method 信越化学工业株式会社 2023-08-22 CN disclosed
CN-111458980-B Composition for forming underlayer film of silicon-containing resist and method for forming pattern 信越化学工业株式会社 2023-08-11 CN disclosed
CN-101646718-B Curable resin composition, protective film, and method for forming protective film JSR CORP JP 2013-04-03 CN disclosed
CN-101226329-A Radiation sensitive resin composition, laminated insulating film, micro lens and preparation method thereof JSR CORP (JP) 2008-07-23 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1250557-C Process for preparing alkoxysilanes TOAGOSEI CO LTD (JP) 2006-04-12 CN disclosed
US-7005532-B2 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2006-02-28 US disclosed
US-20050020845-A1 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2005-01-27 US disclosed
CN-1555380-A Process for preparing alkoxysilanes 东亚合成株式会社 2004-12-15 CN disclosed
EP-1428828-A1 PROCESS FOR PREPARATION OF ALKOXYSILANES TOAGOSEI CO., LTD. (JP) 2004-06-16 EP disclosed
EP-1319052-A1 COATING COMPOSITIONS THE WELDING INSTITUTE (GB) 2003-06-18 EP disclosed
WO-2003004567-A1 HIGH THERMAL CONDUCTIVITY SPIN CASTABLE POTTING COMPOUND LORD CORPORATION (US) 2003-01-16 WO disclosed
WO-2002024824-A1 COATING COMPOSITIONS THE WELDING INSTITUTE (GB) 2002-03-28 WO disclosed