SCHEMBL704932

SCHEMBL704932

CC(C)C(C(=O)O[SiH3])(c1ccccc1)C(C)C

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 2/20 0.46
CYP2D6 P10635 2/20 0.46
CYP2C19 P33261 2/20 0.44
KCNN4 O15554 1/20 0.44
HIF1A Q16665 1/20 0.44
MAPT P10636 2/20 0.41
KMT2A Q03164 2/20 0.41
ALDH1A1 P00352 1/20 0.39
ALOX15 P16050 1/20 0.39
HDAC3 O15379 1/20 0.39
HDAC4 P56524 1/20 0.39
HDAC1 Q13547 1/20 0.39
HDAC7 Q8WUI4 1/20 0.39
HDAC2 Q92769 1/20 0.39
HDAC10 Q969S8 1/20 0.39
HDAC11 Q96DB2 1/20 0.39
HDAC8 Q9BY41 1/20 0.39
HDAC6 Q9UBN7 1/20 0.39
HDAC9 Q9UKV0 1/20 0.39
HDAC5 Q9UQL6 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705564 0.81 CYP1A2 (0.46) CYP1A2CYP2D6CYP2C19KCNN4HIF1A
SCHEMBL7057370 0.79 HDAC3 (0.52) CYP2C19KCNN4HIF1AMAPTKMT2A
SCHEMBL707651 0.79 MAPT (0.55) CYP1A2CYP2C19KCNN4HIF1AMAPT
SCHEMBL12504592 0.76 KCNN4 (0.40) CYP1A2CYP2D6CYP2C19KCNN4HIF1A
SCHEMBL704699 0.76 KCNN4 (0.46) CYP1A2CYP2D6CYP2C19KCNN4HIF1A
SCHEMBL7056401 0.76 KCNN4 (0.46) CYP1A2CYP2D6CYP2C19KCNN4HIF1A
SCHEMBL20681289 0.75 MAPT (0.61) CYP1A2CYP2D6CYP2C19KCNN4HIF1A
SCHEMBL3249695 0.75 CYP1A2 (0.50) CYP1A2CYP2D6CYP2C19KCNN4HIF1A
SCHEMBL705717 0.74 KCNN4 (0.63) CYP1A2CYP2C19KCNN4HIF1AMAPT
SCHEMBL28567881 0.73 CES1 (0.52) CYP1A2CYP2D6CYP2C19HIF1AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed