SCHEMBL705564

SCHEMBL705564

CC(C)C(C(=O)O[SiH3])(c1ccccc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 3/20 0.46
CYP2D6 P10635 2/20 0.46
KCNN4 O15554 1/20 0.44
CYP2C19 P33261 2/20 0.40
HIF1A Q16665 1/20 0.40
CHRM2 P08172 2/20 0.39
CHRM1 P11229 2/20 0.39
CHRM3 P20309 2/20 0.39
KIF11 P52732 2/20 0.37
MAPT P10636 2/20 0.37
KMT2A Q03164 1/20 0.37
CES1 P23141 1/20 0.37
ALDH1A1 P00352 1/20 0.35
ALOX15 P16050 1/20 0.35
HDAC3 O15379 1/20 0.35
HDAC4 P56524 1/20 0.35
HDAC1 Q13547 1/20 0.35
HDAC7 Q8WUI4 1/20 0.35
HDAC2 Q92769 1/20 0.35
HDAC10 Q969S8 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27564046 0.83 KCNN4 (0.60) CYP1A2CYP2D6KCNN4CYP2C19HIF1A
SCHEMBL704932 0.81 CYP1A2 (0.46) CYP1A2CYP2D6KCNN4CYP2C19HIF1A
SCHEMBL13641402 0.78 CYP2D6 (0.59) CYP1A2CYP2D6KCNN4CYP2C19HIF1A
SCHEMBL12504098 0.77 CHRM2 (0.40) CYP1A2CYP2D6KCNN4CHRM2CHRM1
SCHEMBL7054463 0.76 CHRM2 (0.58) CYP1A2CYP2D6KCNN4CYP2C19HIF1A
SCHEMBL12504347 0.75 CHRM2 (0.38) CYP2D6KCNN4CHRM2CHRM1CHRM3
SCHEMBL7057370 0.75 HDAC3 (0.52) KCNN4CYP2C19HIF1ACHRM2CHRM1
SCHEMBL28240314 0.75 MAPT (0.55) CYP1A2CYP2D6KCNN4CYP2C19HIF1A
SCHEMBL707651 0.75 MAPT (0.55) CYP1A2KCNN4CYP2C19HIF1ACHRM2
SCHEMBL705717 0.74 KCNN4 (0.63) CYP1A2KCNN4CYP2C19HIF1ACHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed