SCHEMBL707651

SCHEMBL707651

CC(C)(C(=O)O[SiH3])c1ccccc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.55
KMT2A Q03164 1/20 0.55
KCNN4 O15554 1/20 0.48
CYP2C19 P33261 1/20 0.44
HIF1A Q16665 1/20 0.44
ALDH1A1 P00352 1/20 0.43
ALOX15 P16050 1/20 0.43
HDAC3 O15379 2/20 0.42
HDAC4 P56524 2/20 0.42
HDAC1 Q13547 2/20 0.42
HDAC7 Q8WUI4 2/20 0.42
HDAC2 Q92769 2/20 0.42
HDAC10 Q969S8 2/20 0.42
HDAC11 Q96DB2 2/20 0.42
HDAC8 Q9BY41 2/20 0.42
HDAC6 Q9UBN7 2/20 0.42
HDAC9 Q9UKV0 2/20 0.42
HDAC5 Q9UQL6 2/20 0.42
MAPK1 P28482 1/20 0.41
CES1 P23141 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7057370 0.83 HDAC3 (0.52) MAPTKMT2AKCNN4CYP2C19HIF1A
SCHEMBL17681414 0.83 MAPT (0.59) MAPTKMT2AKCNN4CYP2C19HIF1A
SCHEMBL728471 0.81 KCNN4 (0.67) MAPTKMT2AKCNN4CYP2C19HIF1A
SCHEMBL728468 0.81 MAPT (0.57) MAPTKMT2AKCNN4CYP2C19HIF1A
SCHEMBL9034523 0.81 MAPT (0.57) MAPTKMT2AKCNN4CYP2C19HIF1A
SCHEMBL7056401 0.80 KCNN4 (0.46) MAPTKMT2AKCNN4CYP2C19HIF1A
SCHEMBL704699 0.80 KCNN4 (0.46) MAPTKMT2AKCNN4CYP2C19HIF1A
Ammonia Solution, Strong SCHEMBL11249050 0.79 KCNN4 (0.64) MAPTKMT2AKCNN4CYP2C19HIF1A
SCHEMBL27868527 0.79 MAPT (0.61) MAPTKMT2AKCNN4CYP2C19HIF1A
Hydrochloric Acid SCHEMBL27604363 0.79 KCNN4 (0.64) MAPTKMT2AKCNN4CYP2C19HIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 168 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US claimed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
US-20070087025-A1 Reiteratively layered medical devices and method of preparing same FITZHUGH ANTHONY 2007-04-19 US claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
EP-1436018-A1 NITRIC OXIDE-RELEASING COATED MEDICAL DEVICES AND METHOD OF PREPARING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES (US) 2004-07-14 EP claimed
EP-1432857-A1 COATED OPTICAL FIBERS USING ADHESION PROMOTERS, AND METHODS FOR MAKING AND USING SAME BORDEN CHEMICAL, INC. (US) 2004-06-30 EP claimed
US-20030129397-A1 Coated optical fibers using adhesion promoters, and methods for making and using same HEXION INC. 2003-07-10 US claimed
WO-2003026717-A1 NITRIC OXIDE-RELEASING COATED MEDICAL DEVICES AND METHOD OF PREPARING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, REPRESENTED BY THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES (US) 2003-04-03 WO claimed
WO-2003023101-A1 COATED OPTICAL FIBERS USING ADHESION PROMOTERS, AND METHODS FOR MAKING AND USING SAME BORDEN CHEMICAL, INC. (US) 2003-03-20 WO claimed
US-4208312-A ACYLOXYSILANE COMPONENT TO EXTEND POT LIFE SHIN-ETSU CHEMICAL CO. LTD. (JP) 1980-06-17 US claimed
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-12339586-B2 Photocurable resin composition containing self-crosslinkable polymer NISSAN CHEMICAL CORPORATION (JP) 2025-06-24 US disclosed
US-20250172869-A1 WAFER END PROTECTIVE-FILM FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING NISSAN CHEMICAL CORPORATION (JP) 2025-05-29 US disclosed
US-20250116936-A1 PHOTOCURABLE RESIN COMPOSITION CONTAINING SELF-CROSSLINKABLE POLYMER NISSAN CHEMICAL CORPORATION (JP) 2025-04-10 US disclosed
US-20250110402-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING UNSATURATED BOND AND CYCLIC STRUCTURE NISSAN CHEMICAL CORPORATION (JP) 2025-04-03 US disclosed
WO-2025041813-A1 COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ASSEMBLY 日産化学株式会社 2025-02-27 WO disclosed
US-20250044692-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-02-06 US disclosed
EP-4492142-A1 WAFER EDGE PROTECTIVE FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING Nissan Chemical Corporation (JP) 2025-01-15 EP disclosed
US-20250011507-A1 POLYCYCLIC AROMATIC HYDROCARBON PHOTOCURABLE RESIN COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-01-09 US disclosed
US-20250014901-A1 WAFER EDGE PROTECTIVE FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING NISSAN CHEMICAL CORPORATION (JP) 2025-01-09 US disclosed
EP-4485077-A1 PHOTOCURABLE RESIN COMPOSITION CONTAINING SELF-CROSSLINKING POLYMER Nissan Chemical Corporation (JP) 2025-01-01 EP disclosed
US-20240419073-A1 ADDITIVE-CONTAINING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2024-12-19 US disclosed
US-20240393693-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION, LAMINATE USING THE COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2024-11-28 US disclosed
WO-2024237188-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER 日産化学株式会社 2024-11-21 WO disclosed
WO-2024225431-A1 COMPOSITION FOR FORMING WET-REMOVABLE SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-10-31 WO disclosed
WO-2024195705-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM FOR i-RAY LITHOGRAPHY 日産化学株式会社 2024-09-26 WO disclosed
EP-4435517-A1 POLYCYCLIC AROMATIC HYDROCARBON-BASED PHOTO-CURABLE RESIN COMPOSITION Nissan Chemical Corporation (JP) 2024-09-25 EP disclosed
US-20240302744-A1 COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION NISSAN CHEMICAL CORPORATION (JP) 2024-09-12 US disclosed
WO-2024185665-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-09-12 WO disclosed
US-20240295819-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-09-05 US disclosed
US-20240295815-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2024-09-05 US disclosed
US-20240231230-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-07-11 US disclosed
EP-4398035-A1 WAFER EDGE PROTECTIVE-FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING Nissan Chemical Corporation (JP) 2024-07-10 EP disclosed
US-20240201593-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
WO-2024063044-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-03-28 WO disclosed
US-20240069441-A1 COMPOSITION FOR RESIST UNDERLYING FILM FORMATION NISSAN CHEMICAL CORPORATION (JP) 2024-02-29 US disclosed
WO-2024019064-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID 日産化学株式会社 2024-01-25 WO disclosed
WO-2024009993-A1 METHOD OF MANUFACTURING LAMINATE AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT 日産化学株式会社 2024-01-11 WO disclosed
WO-2023171733-A1 WAFER EDGE PROTECTIVE FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING 日産化学株式会社 2023-09-14 WO disclosed
WO-2023162968-A1 PHOTOCURABLE RESIN COMPOSITION CONTAINING SELF-CROSSLINKING POLYMER 日産化学株式会社 2023-08-31 WO disclosed
WO-2023157943-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UNSATURATED BOND AND CYCLIC STRUCTURE 日産化学株式会社 2023-08-24 WO disclosed
WO-2023136250-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2023-07-20 WO disclosed
US-20230168582-A1 COMPOSITION FOR FORMING RESIST UNDERLYING FILM NISSAN CHEMICAL CORPORATION (JP) 2023-06-01 US disclosed
WO-2023085414-A1 POLYCYCLIC AROMATIC HYDROCARBON-BASED PHOTO-CURABLE RESIN COMPOSITION 日産化学株式会社 2023-05-19 WO disclosed
WO-2023074777-A1 ADDITIVE-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2023-05-04 WO disclosed
WO-2023037979-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, MULTILAYER BODY USING SAID COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 日産化学株式会社 2023-03-16 WO disclosed
WO-2023033094-A1 WAFER EDGE PROTECTIVE-FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING 日産化学株式会社 2023-03-09 WO disclosed
WO-2023008507-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2023-02-02 WO disclosed
CN-115485624-A Composition for forming resist underlayer film 日产化学株式会社 2022-12-16 CN disclosed
WO-2022260154-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2022-12-15 WO disclosed
WO-2022230940-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2022-11-03 WO disclosed
WO-2022210960-A1 COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION 日産化学株式会社 2022-10-06 WO disclosed
WO-2022210944-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION 日産化学株式会社 2022-10-06 WO disclosed
WO-2022210901-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2022-10-06 WO disclosed
EP-3039079-B1 CURABLE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE DDP SPECIALTY ELECTRONIC MAT US 9 LLC (US) 2022-05-18 EP disclosed
US-10766982-B2 Cationic polymerization of olefins using green acids LEWIS STEWART P (US) 2020-09-08 US disclosed
US-20190330395-A1 CATIONIC POLYMERIZATION OF OLEFINS USING GREEN ACIDS LEWIS STEWART P (US) 2019-10-31 US disclosed
EP-3141538-B1 IMPROVED PROCESS STABILITY OF NBDE USING SUBSTITUTED PHENOL STABILIZERS VERSUM MAT US LLC (US) 2019-10-30 EP disclosed
EP-2318477-B1 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FUJIFILM ELECTRONIC MAT USA INC (US) 2019-06-05 EP disclosed
US-9909007-B2 Curable silicone composition, cured product thereof, and optical semiconductor device DOW CORNING CORPORATION (US) 2018-03-06 US disclosed
EP-3141538-A1 IMPROVED PROCESS STABILITY OF NBDE USING SUBSTITUTED PHENOL STABILIZERS AIR PRODUCTS AND CHEMICALS, INC. (US) 2017-03-15 EP disclosed
EP-2141141-B1 Improved Process Stability of NBDE Using Substituted Phenol Stabilizers AIR PROD & CHEM (US) 2016-09-28 EP disclosed
EP-2914664-B1 CURABLE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE DOW CORNING TORAY CO LTD (JP) 2016-09-07 EP disclosed
US-20160215141-A1 Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-07-28 US disclosed
EP-3039079-A1 CURABLE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE Dow Corning Corporation (US) 2016-07-06 EP disclosed
US-9312196-B2 Curable silicone composition, cured product thereof, and optical semiconductor DOW CORNING TORAY CO., LTD. (JP) 2016-04-12 US disclosed
EP-1931613-B1 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FUJIFILM ELECTRONIC MATERIALS (US) 2015-11-11 EP disclosed
US-20150252221-A1 Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor DOW TORAY CO., LTD. (JP) 2015-09-10 US disclosed
US-20150252220-A1 Curable Silicone Composition, And Semiconductor Sealing Material And Optical Semiconductor Device Using The Same DOW CORNING TORAY CO., LTD. (JP) 2015-09-10 US disclosed
EP-2914664-A1 CURABLE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE Dow Corning Toray Co., Ltd. (JP) 2015-09-09 EP disclosed
EP-2898011-A1 CURABLE SILICONE COMPOSITION, AND SEMICONDUCTOR SEALING MATERIAL AND OPTICAL SEMICONDUCTOR DEVICE USING THE SAME Dow Corning Toray Co., Ltd. (JP) 2015-07-29 EP disclosed
WO-2015030224-A1 CURABLE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE DOW CORNING CORPORATION (US) 2015-03-05 WO disclosed
EP-1790703-B1 Coating liquid for forming silica-based film having low dielectric constant and substrate having film of low dielectric constant coated thereon JGC CATALYSTS & CHEMICALS LTD (JP) 2014-07-30 EP disclosed
US-20140191161-A1 Curable Silicon Composition, Cured Product Thereof, And Optical Semiconductor Device DOW CORNING TORAY CO., LTD. (JP) 2014-07-10 US disclosed
US-20140187733-A1 Organopolysiloxane, And Method For Producing Same DOW CORNING TORAY CO., LTD. (JP) 2014-07-03 US disclosed
EP-2733160-A1 ORGANO POLYSILOXANE, AND METHOD FOR PRODUCING SAME Dow Corning Toray Co., Ltd. (JP) 2014-05-21 EP disclosed
EP-2730620-A1 CURABLE SILICON COMPOSITION, CURED PRODUCT THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE Dow Corning Toray Co., Ltd. (JP) 2014-05-14 EP disclosed
WO-2014069610-A1 CURABLE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE DOW CORNING TORAY CO., LTD. (JP) 2014-05-08 WO disclosed
WO-2014046309-A1 CURABLE SILICONE COMPOSITION, AND SEMICONDUCTOR SEALING MATERIAL AND OPTICAL SEMICONDUCTOR DEVICE USING THE SAME DOW CORNING TORAY CO., LTD. (JP) 2014-03-27 WO disclosed
WO-2014002919-A1 COATING AGENT, ELECTRICAL-ELECTRONIC EQUIPMENT, AND METHOD FOR PROTECTING METAL PARTS OF ELECTRICAL-ELECTRONIC EQUIPMENT DOW CORNING TORAY CO., LTD. (JP) 2014-01-03 WO disclosed
EP-1931746-B1 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FUJIFILM ELECTRONIC MATERIALS (US) 2013-09-04 EP disclosed
US-8252704-B2 Additives to prevent degradation of cyclic alkene derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2012-08-28 US disclosed
EP-0992556-B1 COATING LIQUID FOR FORMING SILICA-BASED FILM HAVING LOW DIELECTRIC CONSTANT AND SUBSTRATE HAVING FILM OF LOW DIELECTRIC CONSTANT COATED THEREON JGC CATALYSTS & CHEMICALS LTD (JP) 2012-05-09 EP disclosed
US-8173213-B2 Process stability of NBDE using substituted phenol stabilizers AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-05-08 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20110259242-A1 Additives to Prevent Degradation of Cyclic Alkene Derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2011-10-27 US disclosed
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US disclosed
US-7985350-B2 Additives to prevent degradation of cyclic alkene derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2011-07-26 US disclosed
EP-2318477-A1 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FujiFilm Electronic Materials USA, Inc. (US) 2011-05-11 EP disclosed
US-7931823-B2 stabilized cyclic alkene composition comprising cyclic alkenes and antioxidant compound to reduce or eliminate residue formation upon evaporation of such compositions; used to form dielectric films FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2011-04-26 US disclosed
US-20110091651-A1 Additives to Prevent Degradation of Cyclic Alkene Derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2011-04-21 US disclosed
US-7901743-B2 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-03-08 US disclosed
US-7883639-B2 stabilized cyclic alkene composition comprising cyclic alkenes and antioxidant compound to reduce or eliminate residue formation upon evaporation of such compositions; used to form dielectric films FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2011-02-08 US disclosed
US-7871536-B2 Additives to prevent degradation of cyclic alkene derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2011-01-18 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
WO-2007033075-A9 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2010-04-29 WO disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
WO-2010005937-A1 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2010-01-14 WO disclosed
EP-2141141-A1 Improved Process Stability of NBDE Using Substituted Phenol Stabilizers Air Products and Chemicals, Inc. (US) 2010-01-06 EP disclosed
US-20090297711-A1 Process Stability of NBDE Using Substituted Phenol Stabilizers AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-12-03 US disclosed
US-20090291210-A1 Additives to Prevent Degradation of Cyclic Alkene Derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2009-11-26 US disclosed
US-20090061633-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-03-05 US disclosed
US-7485690-B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-03 US disclosed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US disclosed
EP-1931613-A2 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FujiFilm Electronic Materials USA, Inc. (US) 2008-06-18 EP disclosed
EP-1931746-A2 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FujiFilm Electronic Materials USA, Inc. (US) 2008-06-18 EP disclosed
US-7385021-B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-10 US disclosed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US disclosed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US disclosed
EP-1790703-A2 Coating liquid for forming silica-based film having low dielectric constant and substrate having film of low dielectric constant coated thereon CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. (JP) 2007-05-30 EP disclosed
US-20070087025-A1 Reiteratively layered medical devices and method of preparing same FITZHUGH ANTHONY 2007-04-19 US disclosed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO disclosed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO disclosed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO disclosed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US disclosed
WO-2007033123-A2 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2007-03-22 WO disclosed
WO-2007033075-A2 ADDITIVES TO PREVENT DEGRADATION OF CYCLIC ALKENE DERIVATIVES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2007-03-22 WO disclosed
US-20070057235-A1 Additives to prevent degradation of cyclic alkene derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2007-03-15 US disclosed
US-20070057234-A1 Additives to prevent degradation of cyclic alkene derivatives FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2007-03-15 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20070014828-A1 Cross-linked nitric oxide-releasing polyamine coated substrates, compositions comprising same and method of making same GOVERNMENT OF THE USA, REPRESENTED BY THE SECRETARY, DEPT. OF HEALTH AND HUMAN SERVICES (US) 2007-01-18 US disclosed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO disclosed
EP-1342742-B1 Room temperature curable polysiloxane compositions HANSE CHEMIE AG (DE) 2006-08-02 EP disclosed
EP-1165682-B1 RESIN COMPOSITION AND CURED PRODUCT DSM IP ASSETS BV (NL) 2006-07-05 EP disclosed
EP-1545798-A4 CROSS-LINKED NITRIC OXIDE-RELEASING POLYAMINE COATED SUBSTRATES, COMPOSITIONS COMPRISING SAME AND METHOD OF MAKING SAME US GOV HEALTH & HUMAN SERV (US) 2006-06-14 EP disclosed
US-7005398-B2 Olefin polymerization catalyst, catalyst component for olefin polymerization, method of storing these, and process for producing olefin polymer SUNALLOMER LTD. (JP) 2006-02-28 US disclosed
US-20050274692-A1 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
US-20050277755-A1 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US disclosed
EP-1545798-A1 CROSS-LINKED NITRIC OXIDE-RELEASING POLYAMINE COATED SUBSTRATES, COMPOSITIONS COMPRISING SAME AND METHOD OF MAKING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES (US) 2005-06-29 EP disclosed
EP-1436018-A1 NITRIC OXIDE-RELEASING COATED MEDICAL DEVICES AND METHOD OF PREPARING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES (US) 2004-07-14 EP disclosed
US-6727334-B2 FOR FORMING COATINGS WITH HIGH HARDNESS, SCRATCH RESISTANCE, LOW CURLING PROPERTIES, ADHESION, AND TRANSPARENCY, AND FINE APPEARANCE ON THE SURFACE OF VARIOUS SUBSTRATES FOR SUCH AS PLASTICS DSM N.V. (NL) 2004-04-27 US disclosed
US-20040054102-A1 Olefin polymerization catalyst, catalyst component for olefin polymerization, method of storing these, and process for producing olefin polymer SUNALLOMER LTD. (JP) 2004-03-18 US disclosed
WO-2004012874-A1 CROSS-LINKED NITRIC OXIDE-RELEASING POLYAMINE COATED SUBSTRATES, COMPOSITIONS COMPRISING SAME AND METHOD OF MAKING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, REPRESENTED BY THE SECRETARY, DEPT. OF HEALTH AND HUMAN SERVICES (US) 2004-02-12 WO disclosed
EP-1359166-A1 OLEFIN POLYMERIZATION CATALYST, CATALYST COMPONENT FOR OLEFIN POLYMERIZATION, METHOD OF STORING THESE, AND PROCESS FOR PRODUCING OLEFIN POLYMER Sunallomer Ltd (JP) 2003-11-05 EP disclosed
EP-1342742-A1 Room temperature curable polysiloxane compositions hanse chemie AG (DE) 2003-09-10 EP disclosed
US-6562465-B1 Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. (JP) 2003-05-13 US disclosed
WO-2003026717-A1 NITRIC OXIDE-RELEASING COATED MEDICAL DEVICES AND METHOD OF PREPARING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, REPRESENTED BY THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES (US) 2003-04-03 WO disclosed
US-20020058737-A1 Resin composition and cured product JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1165682-A1 RESIN COMPOSITION AND CURED PRODUCT DSM N.V. (NL) 2002-01-02 EP disclosed
US-6268440-B1 MIXING WATER BASED COMPOSITE RESINS AND POLYSILOXANES WITH CONDENSATION REACTION, DISPERSION AND DISSOLVING DAINIPPON INK AND CHEMICALS, INC. (JP) 2001-07-31 US disclosed
WO-2000047666-A1 RESIN COMPOSITION AND CURED PRODUCT DSM N.V. (NL) 2000-08-17 WO disclosed
EP-0992556-A1 COATING LIQUID FOR FORMING SILICA-BASED FILM HAVING LOW DIELECTRIC CONSTANT AND SUBSTRATE HAVING FILM OF LOW DIELECTRIC CONSTANT COATED THEREON Catalysts & Chemicals Industries Co., Ltd. (JP) 2000-04-12 EP disclosed
WO-1998045368-A1 OLEFIN (CO-)POLYMER COMPOSITIONS AND METHOD OF PRODUCING THE SAME CHISSO CORPORATION (JP) 1998-10-15 WO disclosed
US-5563228-A Method for the preparation of polyheterosiloxanes DOW CORNING ASIA, LTD. (JP) 1996-10-08 US disclosed
EP-0564004-B1 A highly stereoregular polypropylene CHISSO CORP (JP) 1996-09-25 EP disclosed
EP-0669361-A2 Method for the preparation of polyheterosiloxanes DOW CORNING ASIA, Ltd. (JP) 1995-08-30 EP disclosed
EP-0564004-A1 A highly stereoregular polypropylene CHISSO CORPORATION (JP) 1993-10-06 EP disclosed
US-5077341-A Using coordination catalyst CHISSO CORPORATION (JP) 1991-12-31 US disclosed
EP-0404519-A2 A process for producing a high-stiffness polypropylene CHISSO CORPORATION (JP) 1990-12-27 EP disclosed
EP-0404519-A2 A process for producing a high-stiffness polypropylene CHISSO CORPORATION (JP) 1990-12-27 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070087025-A1 Reiteratively layered medical devices and method of preparing same NOS2, NOS1, NOS3 MAPT 3023/4885KMT2A 738/4885KCNN4 861/4885
US-20090297711-A1 Process Stability of NBDE Using Substituted Phenol Stabilizers CCNE2, CCNE1, C1R MAPT 2173/4885KMT2A 3205/4885KCNN4 1976/4885
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 MAPT 965/4885KMT2A 111/4885KCNN4 1472/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L MAPT 4790/4885KMT2A 1145/4885KCNN4 893/4885
US-20110259242-A1 Additives to Prevent Degradation of Cyclic Alkene Derivatives GPX4, GPX1, NFE2L2 MAPT 4051/4885KMT2A 3634/4885KCNN4 4380/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.