SCHEMBL705097

SCHEMBL705097

CCCC(O[SiH3])C(C)(c1ccccc1)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.36
TAAR1 Q96RJ0 1/20 0.34
ALDH1A1 P00352 1/20 0.34
ALOX15 P16050 1/20 0.34
PRSS1 P07477 1/20 0.33
CTSG P08311 1/20 0.33
CTRB1 P17538 1/20 0.33
CMA1 P23946 1/20 0.33
KCNN4 O15554 1/20 0.33
KIF11 P52732 1/20 0.32
CYP2C19 P33261 1/20 0.32
HIF1A Q16665 1/20 0.32
MEN1 O00255 1/20 0.31
TTR P02766 1/20 0.31
KMT2A Q03164 1/20 0.31
AOC3 Q16853 1/20 0.31
RIPK1 Q13546 1/20 0.31
CTSL P07711 1/20 0.30
CTSB P07858 1/20 0.30
CTSH P09668 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708011 0.85 MAPK1 (0.39) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL6694076 0.84 TAAR1 (0.41) MAPK1TAAR1ALDH1A1ALOX15KIF11
SCHEMBL702749 0.81 KCNH2 (0.37) MAPK1PRSS1CTSGCTRB1CMA1
SCHEMBL2319956 0.76 MAPK1 (0.40) MAPK1TAAR1ALDH1A1ALOX15PRSS1
SCHEMBL5530879 0.72 AOC3 (0.41) TAAR1ALDH1A1ALOX15KCNN4KIF11
SCHEMBL15178054 0.71 ALDH1A1 (0.35) MAPK1ALDH1A1PRSS1CTSGCTRB1
SCHEMBL708760 0.71 MAPK1 (0.43) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL704255 0.69
SCHEMBL702333 0.69 KCNH2 (0.44) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL22400784 0.69 MAPK1 (0.52) MAPK1TAAR1ALDH1A1ALOX15PRSS1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed